Diode Arrays MBR2X160A150 product image

MBR2X160A150

$42.30
  • Description:DIODE MOD SCHOT 150V 160A SOT227
  • Series:-

SKU:1f3c1b3d6943 Category: Brand:

  
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MBR2X160A150 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 150V 160A SOT227. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR2X160A150

  • Description:DIODE MOD SCHOT 150V 160A SOT227
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:2 Independent
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):150 V
  • Current - Average Rectified (Io) (per Diode):160A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 160 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 150 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR2X160A150

MBR2X160A150

Diode Arrays Overview

The GeneSiC Semiconductor MBR2X160A150 is a silicon Schottky rectifier module housed in an electrically isolated SOT-227 package. It features a maximum repetitive peak reverse voltage of 150 V and an average forward current rating of 320 A per package at a case temperature of 110 °C. The device supports a peak forward surge current of 2000 A per leg and operates within a junction temperature range of -40 to 150 °C. Key electrical characteristics include a maximum instantaneous reverse current of 3 mA at rated DC blocking voltage and a typical forward voltage of 0.80 V at 160 A and 25 °C. The module provides 2500 V isolation voltage between terminals and the base plate.

Diode Arrays Feature Summary

  • High surge capability with a 2000 A peak forward surge current rating per leg
  • Electrically isolated base plate design for enhanced safety and thermal management
  • Robust thermal performance with a low maximum thermal resistance of 0.30 °C/W per leg

Diode Arrays Applications

  • DC/DC converter circuits requiring high efficiency and fast switching
  • Free-wheeling rectification in motor drive systems
  • Power supply output rectification in industrial equipment

Diode Arrays Procurement Notes

Verify the specific manufacturer source, as the provided datasheet originates from diodemodule.com rather than GeneSiC Semiconductor directly. Confirm that the SOT-227 package dimensions and terminal configuration match your PCB layout requirements. Ensure that the thermal interface material selection aligns with the specified maximum thermal resistance of 0.30 °C/W to maintain reliable operation under the stated 320 A load conditions.

Diode Arrays Selection Notes

Select this component when a 150 V blocking voltage and 320 A continuous current capacity are required in a compact SOT-227 form factor. The low forward voltage drop contributes to reduced conduction losses compared to standard PN junction rectifiers. Consider the 2500 V isolation voltage if galvanic isolation between the circuit ground and the heatsink is necessary for system safety compliance.

Diode Arrays Part Context

This part belongs to the MBR2X series of silicon Schottky rectifier modules designed for high-current applications. The series utilizes an electrically isolated base plate to simplify mounting and improve thermal dissipation. The MBR2X160A150 specifically targets designs needing robust surge handling and efficient power conversion within a standardized package footprint common in industrial power electronics.

Diode Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

MBR2X160A150MBR2X160A150
$42.30
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