MBR3050CTE3/TU

Diode Arrays Overview

The MBR3050CTE3/TU is a dual common cathode Schottky barrier rectifier manufactured by Microchip Technology. It features a silicon construction housed in a TO-220AB through-hole package with three terminals. The device supports a maximum repetitive peak reverse voltage of 50 V and an average forward rectified current of 30 A at a case temperature of 105°C. The maximum non-repetitive peak forward surge current is rated at 275 A for a single half-sine wave. Forward voltage drop is limited to 0.75 V, while reverse leakage current remains at 50 µA. Operating temperatures range from -65°C to +175°C junction temperature.

Diode Arrays Feature Summary

• Utilizes majority carrier conduction via metal-silicon junctions for low power loss
• Provides high surge capacity suitable for demanding transient conditions
• Incorporates guard ring structures for enhanced overvoltage protection

Diode Arrays Applications

• Low voltage, high frequency inverters
• Free wheeling diode circuits
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific manufacturer designation, as historical records indicate prior production under Microsemi before corporate acquisition. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability may vary based on production cycles and regional stock constraints.

Diode Arrays Selection Notes

Select this component for designs requiring robust current handling in compact through-hole layouts. Ensure thermal management strategies account for the specified case temperature ratings. Verify that the 50 V reverse voltage rating aligns with the circuit's peak inverse voltage requirements to prevent breakdown during operation.

Diode Arrays Part Context

This part belongs to the MBR30xxCT series of Schottky rectifiers, designed for efficiency in power conversion systems. The suffix E3 indicates lead-free composition, while TU denotes tube packaging. These devices are engineered to replace standard fast recovery rectifiers where lower forward voltage drop and faster switching speeds are critical for system performance.

Diode Arrays Replacement Considerations

Cross-reference with MBR3040FCTe3/TU for lower voltage variants or MBR3080FCTe3/TU for higher voltage options within the same current class. Verify pinout compatibility and thermal resistance specifications when substituting components from different manufacturers.

Diode Arrays FAQ

What is the maximum junction temperature for this device?

The maximum operating junction temperature is 175°C.

Is the device compliant with environmental regulations?

Yes, the component is RoHS compliant and classified under EAR99 export control code.

How is the internal configuration structured?

It contains two silicon elements configured as a common cathode array.