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MBR40020CTRL is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 20V 200A 2TOWER. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for MBR40020CTRL
- Description：DIODE MOD SCHOTT 20V 200A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：20 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：580 mV @ 200 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：3 mA @ 20 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
Diode Arrays datasheet and documents for MBR40020CTRL
Diode Arrays Overview
The GeneSiC Semiconductor MBR40020CTRL is a Twin Tower Schottky diode module rated for 20 V maximum DC blocking voltage and 400 A average forward current per package. It features a maximum instantaneous forward voltage of 0.58 V at 3000 A and a peak forward surge current of 3000 A. The device operates within a temperature range of -55 °C to +150 °C, with a junction-to-case thermal resistance of 0.35 °C/W per leg.
Diode Arrays Feature Summary
- Schottky rectifier technology providing low forward voltage drop
- High surge current capability for robust operation
- Positive temperature coefficient for stable parallel operation
Diode Arrays Applications
- DC-DC converters
- Power factor correction circuits
- Free-wheeling applications in motor drives
Diode Arrays Procurement Notes
Verify the specific ordering suffix against official GeneSiC documentation to confirm terminal configuration and packaging variations. Confirm RoHS compliance status through the manufacturer's latest product compliance reports before finalizing procurement specifications.
Diode Arrays Selection Notes
Select this component for high-current, low-voltage power conversion systems requiring efficient heat dissipation. Ensure the application design accommodates the 0.35 °C/W thermal resistance and maintains junction temperatures within the specified -55 °C to +150 °C operational limits.
Diode Arrays Part Context
This module belongs to the MBR400 series of silicon Schottky diodes manufactured by GeneSiC Semiconductor. These components are designed for high-efficiency power applications, offering superior performance compared to standard fast recovery diodes due to their zero reverse recovery charge characteristics.
Diode Arrays Replacement Considerations
Consult official GeneSiC cross-reference documents for verified substitutes. Generic equivalents may not match the specific Twin Tower package dimensions or the precise 0.35 °C/W thermal resistance requirements.
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