MBR40030CTR

Diode Arrays Overview

The GeneSiC MBR40030CTR is a silicon power Schottky rectifier module rated for a repetitive peak reverse voltage of 30 V and an average forward current of 400 A per package. It features a Twin Tower package with screw mounting, offering a maximum forward voltage of 0.70 V per leg and a thermal resistance of 0.35 °C/W. The device supports a peak forward surge current of 3000 A and operates within a junction temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

• High surge capability designed for robust power applications
• Twin Tower package configuration for efficient thermal management
• Not ESD sensitive for simplified handling

Diode Arrays Applications

• Power conversion systems
• DC-DC converters
• Inverter circuits

Diode Arrays Procurement Notes

Verify the specific part number against official GeneSiC Semiconductor documentation to confirm electrical ratings and package details. Ensure compatibility with system thermal requirements and mounting specifications before procurement. Cross-reference datasheets for any revisions or updates that may affect performance characteristics.

Diode Arrays Selection Notes

Select this component based on its 30 V reverse voltage rating and 400 A average forward current capacity. Consider the 0.35 °C/W thermal resistance for heat sink design. Verify the Twin Tower package dimensions for mechanical fit and ensure the operating temperature range meets application demands.

Diode Arrays Part Context

This module belongs to the MBR400 series of silicon power Schottky diodes from GeneSiC Semiconductor. The series includes variants with different reverse voltage ratings, such as 20 V, 30 V, 35 V, and 40 V, all sharing similar current and thermal characteristics. The 'CTR' suffix typically indicates reversed leads compared to standard CT versions.

Diode Arrays Replacement Considerations

Compatible substitutes include MBR40020CT(R) and MBR40035CT(R). Verify voltage ratings and lead configurations when substituting. Ensure thermal and current capabilities meet or exceed original design requirements.