MBR50040CTR

$61.55

Description：DIODE MOD SCHOTT 40V 250A 2TOWER
Series：-

SKU:a896679f0335 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

MBR50040CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 40V 250A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR50040CTR

Description：DIODE MOD SCHOTT 40V 250A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Anode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：40 V
Current - Average Rectified (Io) (per Diode)：250A
Voltage - Forward (Vf) (Max) @ If：750 mV @ 250 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：1 mA @ 20 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBR50040CTR

MBR50040CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR50040CTR is a silicon power Schottky diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 40 V and an average forward current rating of 500 A per package. The device exhibits a maximum forward voltage of 1 V per leg at Tj = 25 °C and supports a peak forward surge current of 3500 A per leg. Thermal resistance from junction to case is 0.30 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

High surge capability with robust peak forward surge current handling
Electrically isolated Twin Tower package design
Not ESD sensitive for simplified handling

Diode Arrays Applications

High current DC-DC conversion modules
Free-wheeling rectification in high-power inverters
Low voltage high current power supply outputs

Diode Arrays Procurement Notes

Verify the specific suffix 'CTR' against official documentation, as datasheets indicate reversed leads for 'R' variants. Confirm availability status as end-of-life notices may apply. Ensure thermal interface materials match the specified junction-to-case resistance requirements for proper heat dissipation in Twin Tower mounting configurations.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage drop at high currents up to 500 A. The 40 V rating suits low-voltage systems. Verify lead orientation if using 'CTR' variants compared to standard 'CT' versions. Ensure heatsinking capabilities accommodate the 0.30 °C/W thermal resistance to maintain junction temperature within the 150 °C limit.

Diode Arrays Part Context

This module belongs to the MBR500 series of silicon power Schottky diodes. The series offers options ranging from 20 V to 40 V reverse voltage. All variants share the same 500 A current rating and Twin Tower mechanical footprint, allowing for pin-compatible design upgrades or downgrades based on voltage requirements while maintaining identical thermal and current performance characteristics.