MBR50080CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR50080CT is a silicon power Schottky diode module designed for high-current applications. It features a Twin Tower package configuration with an average forward current rating of 500 A per leg and a repetitive peak reverse voltage of 80 V. The device exhibits a maximum forward voltage of 0.84 V at Tj = 150 °C and supports a peak forward surge current of 3500 A per leg. Thermal resistance from junction to case is 0.30 °C/W per leg, enabling operation within a temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

• High surge capability suitable for demanding power environments
• Twin Tower package design for efficient thermal management
• Not ESD sensitive for simplified handling

Diode Arrays Applications

• High-power DC-DC converters
• Industrial motor drives
• Uninterruptible power supplies (UPS)

Diode Arrays Procurement Notes

Verify the specific suffix designation against official documentation to confirm terminal configuration details. Confirm RoHS compliance status through manufacturer datasheets prior to integration. Ensure procurement channels are authorized to guarantee component authenticity and traceability throughout the supply chain.

Diode Arrays Selection Notes

Select this module when high average forward current and robust surge tolerance are required in compact power systems. Evaluate thermal resistance specifications against heatsink capabilities to maintain junction temperatures within safe operating limits during continuous duty cycles.

Diode Arrays Part Context

This component belongs to the MBR500 series of silicon power Schottky diodes. The series offers various voltage ratings ranging from 45 V to 100 V while maintaining consistent 500 A current handling capabilities across different package variants for diverse industrial power conversion needs.

Diode Arrays Replacement Considerations

MBR50080CTR serves as a confirmed substitute variant within the same product family.