Diode Arrays MBR50080CTR product image

MBR50080CTR

$61.55
  • Description:DIODE MOD SCHOTT 80V 250A 2TOWER
  • Series:-

SKU:c1f886085b06 Category: Brand:

  
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MBR50080CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 80V 250A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR50080CTR

  • Description:DIODE MOD SCHOTT 80V 250A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):250A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 250 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR50080CTR

MBR50080CTR

Diode Arrays Overview

The MBR50080CTR is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package with screw mount installation and an operating temperature range of -55°C to +150°C. The device has a repetitive peak reverse voltage (VRRM) of 80 V, an average forward current (IF(AV)) of 500 A per package, and a maximum forward voltage (VF) of 0.84 V at Tj = 150°C. The thermal resistance from junction to case (RΘJC) is 0.30 °C/W per leg. The peak forward surge current (IFSM) is 3500 A for an 8.3 ms half-sine wave pulse.

Diode Arrays Feature Summary

  • High surge capability
  • Electrically isolated base plate
  • Not ESD sensitive

Diode Arrays Applications

  • High-power rectification in industrial equipment
  • DC-DC converter freewheeling applications
  • Inverter circuits requiring high current handling

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration details. Confirm RoHS compliance status through the manufacturer's latest product data sheet before procurement. Ensure that the required thermal interface materials are compatible with the specified mounting style and package dimensions.

Diode Arrays Selection Notes

Select this component when a high-current Schottky rectifier with low forward voltage drop is required. The Twin Tower package facilitates efficient heat dissipation for high-power applications. Verify that the system's thermal management can maintain the junction temperature within the specified operating range under maximum load conditions.

Diode Arrays Part Context

This module belongs to the MBR500 series of silicon power Schottky diodes. The series offers various voltage ratings from 45 V to 100 V while maintaining a consistent 500 A current rating. The CTR suffix indicates a specific terminal configuration variant within the Twin Tower package family designed for robust industrial mounting.

Diode Arrays Replacement Considerations

MBR50060CTR

Diode Arrays FAQ

What is the peak forward surge current rating?

The peak forward surge current (IFSM) is rated at 3500 A for an 8.3 ms half-sine wave pulse.

Is the module sensitive to electrostatic discharge?

No, the module is not ESD sensitive.

What is the thermal resistance from junction to case?

The thermal resistance (RΘJC) is 0.30 °C/W per leg.

MBR50080CTRMBR50080CTR
$61.55
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