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MBR50080CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 80V 250A 2TOWER. Review the specifications below when checking this part for your BOM.
The MBR50080CTR is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package with screw mount installation and an operating temperature range of -55°C to +150°C. The device has a repetitive peak reverse voltage (VRRM) of 80 V, an average forward current (IF(AV)) of 500 A per package, and a maximum forward voltage (VF) of 0.84 V at Tj = 150°C. The thermal resistance from junction to case (RΘJC) is 0.30 °C/W per leg. The peak forward surge current (IFSM) is 3500 A for an 8.3 ms half-sine wave pulse.
Verify the specific part number suffix against official documentation to confirm terminal configuration details. Confirm RoHS compliance status through the manufacturer's latest product data sheet before procurement. Ensure that the required thermal interface materials are compatible with the specified mounting style and package dimensions.
Select this component when a high-current Schottky rectifier with low forward voltage drop is required. The Twin Tower package facilitates efficient heat dissipation for high-power applications. Verify that the system's thermal management can maintain the junction temperature within the specified operating range under maximum load conditions.
This module belongs to the MBR500 series of silicon power Schottky diodes. The series offers various voltage ratings from 45 V to 100 V while maintaining a consistent 500 A current rating. The CTR suffix indicates a specific terminal configuration variant within the Twin Tower package family designed for robust industrial mounting.
MBR50060CTR
The peak forward surge current (IFSM) is rated at 3500 A for an 8.3 ms half-sine wave pulse.
No, the module is not ESD sensitive.
The thermal resistance (RΘJC) is 0.30 °C/W per leg.
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