MBR600100CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR600100CT is a silicon power Schottky diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 100 V and an average forward current rating of 600 A per package. The maximum forward voltage is 840 mV at 300 A, with a thermal resistance of 0.28 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

• High surge capability for robust performance under transient conditions
• Twin Tower package design for efficient mounting and heat dissipation
• Not ESD sensitive for simplified handling

Diode Arrays Applications

• DC-DC converters
• Free-wheeling rectification in motor drives
• Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific suffix (R) if lead reversal is required, as standard CT models have fixed terminal configurations. Confirm RoHS compliance status through official documentation before procurement. Ensure thermal management systems align with the specified junction-to-case thermal resistance values for reliable operation.

Diode Arrays Selection Notes

Select this component when high current capacity and low forward voltage drop are critical. The Twin Tower package suits applications requiring screw-mount installation. Compare thermal resistance and surge current ratings against system requirements to ensure adequate safety margins during peak load operations.

Diode Arrays Part Context

This part belongs to the MBR600 series of silicon Schottky diode modules. The series offers various voltage ratings from 45 V to 100 V while maintaining a consistent 600 A current rating. The Twin Tower package is designed for high-power density applications requiring reliable rectification.

Diode Arrays Replacement Considerations

MBR60045CT, MBR60060CT, MBR60080CT, MBR600100CTR