MBR60040CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR60040CTR is a silicon power Schottky diode module designed for high-current applications. It features a Twin Tower package with screw mount installation. The device supports an average forward current of 600 A per package and offers a repetitive peak reverse voltage range from 20 V to 40 V, specifically rated at 40 V for this model. It includes two elements in a common anode configuration. Key electrical parameters include a maximum forward voltage of 0.75 V per leg at Tj = 100 °C and a thermal resistance junction-case of 0.28 °C/W per leg. The module operates within a temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

• High surge capability with a peak forward surge current rating of 4000 A per leg
• ESD sensitive design considerations noted in documentation
• Twin Tower package construction for robust mechanical mounting

Diode Arrays Applications

• Power conversion systems requiring high current rectification
• Industrial power supplies utilizing screw mount modules
• DC-DC converters operating within specified thermal limits

Diode Arrays Procurement Notes

Verify the specific voltage rating suffix against official datasheets, as the family spans multiple voltage options. Confirm terminal orientation requirements, as 'R' variants feature reversed leads. Check current manufacturing status, as availability may vary by region. Ensure thermal management solutions match the specified junction-to-case thermal resistance values for reliable operation under load conditions.

Diode Arrays Selection Notes

Select based on required reverse voltage tolerance within the 20 V to 40 V family range. Evaluate thermal performance using the 0.28 °C/W junction-case resistance parameter. Consider the common anode configuration for circuit topology compatibility. Verify package dimensions for mechanical fit within the Twin Tower form factor before integration into final assembly designs.

Diode Arrays Part Context

This component belongs to the MBR600 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series utilizes a Twin Tower package style suitable for high-power density applications. The manufacturer has been acquired by Navitas Semiconductor, which continues to support these product lines through its distribution channels.

Diode Arrays Replacement Considerations

Cross-reference with other models in the MBR600CT(R) family for different voltage ratings such as MBR60020CTR or MBR60035CTR if voltage specifications differ.