Diode Arrays MBR60045CTL product image

MBR60045CTL

$70.13
  • Description:DIODE MOD SCHOTT 45V 300A 2TOWER
  • Series:-

SKU:6159a82947b2 Category: Brand:

  
  • Quantity
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MBR60045CTL is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 45V 300A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR60045CTL

  • Description:DIODE MOD SCHOTT 45V 300A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:600 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 mA @ 45 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR60045CTL

MBR60045CTL

Diode Arrays Overview

The GeneSiC Semiconductor MBR60045CTL is a silicon Schottky diode module featuring a Twin Tower package. It provides a maximum DC blocking voltage of 45 V and an average forward current rating of 600 A per package. The device supports an operating temperature range from -55 °C to +150 °C. Key electrical characteristics include a maximum instantaneous forward voltage of 0.60 V at 300 A and a thermal resistance of 0.28 °C/W per leg.

Diode Arrays Feature Summary

  • Utilizes Silicon Schottky technology for high-efficiency rectification
  • Features a Twin Tower mechanical housing design
  • Supports high-temperature operation up to 150 °C

Diode Arrays Applications

  • High-current power supply circuits
  • DC-DC converter modules
  • Industrial motor drive systems

Diode Arrays Procurement Notes

Verify the specific suffix 'L' against official documentation, as datasheets may primarily reference the base model. Confirm terminal configuration markings match project requirements. Ensure mounting hardware compatibility with the Twin Tower package dimensions. Validate thermal interface material specifications for the 0.28 °C/W junction-to-case rating during system integration.

Diode Arrays Selection Notes

Select this component for applications requiring high surge capability and low forward voltage drop. The 4000 A peak forward surge current rating supports robust transient handling. Verify that the 45 V reverse voltage rating aligns with circuit peak inverse voltage limits. Consider the Twin Tower form factor for board space optimization in high-density designs.

Diode Arrays Part Context

This part belongs to the MBR600 series of silicon Schottky rectifiers manufactured by GeneSiC Semiconductor. The series is designed for high-power density applications requiring reliable performance under extreme thermal conditions. The Twin Tower package variant offers standardized mounting options for industrial power electronics.

Diode Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts maintain identical Twin Tower packaging and 600 A current ratings. Verify that alternative components support the same 45 V blocking voltage and 150 °C operating temperature range.

MBR60045CTLMBR60045CTL
$70.13
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