MBR60045CTR

$91.69

Description：DIODE MOD SCHOTT 45V 300A 2TOWER
Series：-

SKU:bf01dd73a9bb Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

MBR60045CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 45V 300A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR60045CTR

Description：DIODE MOD SCHOTT 45V 300A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Anode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：45 V
Current - Average Rectified (Io) (per Diode)：300A
Voltage - Forward (Vf) (Max) @ If：750 mV @ 300 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：1 mA @ 20 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBR60045CTR

MBR60045CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR60045CTR is a silicon power Schottky diode module rated for 45 V repetitive peak reverse voltage and 600 A average forward current per package. It utilizes a Twin Tower package with an electrically isolated base plate. The device supports junction temperatures from -55 °C to +150 °C, featuring a maximum forward voltage of 0.75 V per leg at Tj = 25 °C and a thermal resistance of 0.28 °C/W per leg.

Diode Arrays Feature Summary

High surge capability with a peak forward surge current rating of 4000 A
Electrically isolated base plate design within the Twin Tower package
Not ESD sensitive construction

Diode Arrays Applications

Power conversion systems requiring high current rectification
Industrial motor drives
DC-DC converter modules

Diode Arrays Procurement Notes

Verify the specific suffix 'CTR' against official documentation to confirm lead orientation differences compared to standard variants. Confirm RoHS compliance status and check for any regional shipping restrictions or export control requirements before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component for applications demanding high average forward current handling in a compact form factor. Ensure the system operates within the specified -55 °C to +150 °C junction temperature range and accounts for the 0.28 °C/W thermal resistance per leg during heatsink design.

Diode Arrays Part Context

This part belongs to the MBR600 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings from 45 V to 100 V while maintaining consistent 600 A current capabilities across different package configurations.