MBR60060CT

$91.69

Description：DIODE MOD SCHOTT 60V 300A 2TOWER
Series：-

SKU:a2537b403466 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

MBR60060CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 60V 300A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR60060CT

Description：DIODE MOD SCHOTT 60V 300A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：60 V
Current - Average Rectified (Io) (per Diode)：300A
Voltage - Forward (Vf) (Max) @ If：800 mV @ 300 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：1 mA @ 20 V
Operating Temperature - Junction：-50°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBR60060CT

MBR60060CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR60060CT is a silicon power Schottky diode module featuring a twin tower package configuration. It provides a repetitive peak reverse voltage of 60 V and an average forward current rating of 600 A per package. The device exhibits a maximum forward voltage of 0.80 V per leg at Tj = 25 °C and IF = 300 A. Thermal resistance from junction to case is 0.28 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

High surge capability with peak forward surge current of 4000 A per leg
Twin tower package design for efficient thermal management
Not ESD sensitive for simplified handling

Diode Arrays Applications

High-efficiency DC-DC converters
Free-wheeling rectification in motor drives
Power factor correction circuits

Diode Arrays Procurement Notes

Verify the specific suffix designation against official documentation, as variants may exist. Confirm terminal configurations and mounting requirements prior to integration. Ensure thermal interface materials are compatible with the specified junction-to-case thermal resistance values for optimal heat dissipation performance.

Diode Arrays Selection Notes

Select this component when high current capacity and low forward voltage drop are required in a compact form factor. Evaluate thermal management solutions to maintain junction temperature within the specified operating range under maximum load conditions. Consider the twin tower package dimensions for PCB layout constraints.

Diode Arrays Part Context

This part belongs to the MBR600 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants with reverse voltages ranging from 45 V to 100 V, all sharing similar current ratings and package styles. These modules are designed for demanding power electronics applications requiring robust performance.