Diode Arrays MBR60060CTR product image

MBR60060CTR

$91.69
  • Description:DIODE MOD SCHOTT 60V 300A 2TOWER
  • Series:-

SKU:df180dfd024d Category: Brand:

  
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MBR60060CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 60V 300A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR60060CTR

  • Description:DIODE MOD SCHOTT 60V 300A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:800 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR60060CTR

MBR60060CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR60060CTR is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 60 V and an average forward current of 600 A per package. It utilizes a Twin Tower package configuration with screw mounting capabilities. The device supports an operating temperature range from -55 °C to +150 °C, featuring a junction-to-case thermal resistance of 0.28 °C/W per leg. Maximum forward voltage is specified at 0.80 V, and it provides a peak forward surge current capability of 4000 A.

Diode Arrays Feature Summary

  • High surge current capability designed for demanding power applications
  • Twin Tower package structure facilitating efficient thermal management
  • Non-ESD sensitive construction for robust handling

Diode Arrays Applications

  • Industrial power conversion systems
  • DC-DC converter modules
  • Solar inverter rectification stages

Diode Arrays Procurement Notes

Verify the specific suffix 'CTR' against official documentation to confirm lead orientation, as datasheets indicate reversed leads for 'R' variants. Confirm RoHS compliance status through manufacturer declarations. Ensure procurement channels provide valid traceability for industrial-grade components. Check for end-of-life notifications prior to finalizing supply agreements.

Diode Arrays Selection Notes

Select this component when a 60 V rating and 600 A continuous current capacity are required within a Twin Tower form factor. Evaluate the 0.28 °C/W thermal resistance against system heat sink designs. Consider the 0.80 V forward voltage drop for efficiency calculations. Verify that the screw mount terminal style matches the mechanical assembly constraints of the target enclosure.

Diode Arrays Part Context

This module belongs to the MBR600 series of silicon power Schottky rectifiers manufactured by GeneSiC Semiconductor. The series encompasses various voltage ratings ranging from 45 V to 100 V, all sharing the same 600 A current rating and physical Twin Tower package dimensions. This standardization simplifies design-in processes across different voltage requirements.

Diode Arrays Replacement Considerations

Cross-reference with MBR60045CT or MBR600100CT if voltage ratings align with system needs. Verify pinout compatibility due to potential lead reversal differences between CT and CTR suffixes. Ensure thermal interface material specifications match the 0.28 °C/W junction-to-case requirement.

MBR60060CTRMBR60060CTR
$91.69
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