Diode Arrays MBR60080CT product image

MBR60080CT

$91.69
  • Description:DIODE MOD SCHOTT 80V 300A 2TOWER
  • Series:-

SKU:9a879e517e65 Category: Brand:

  
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MBR60080CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 80V 300A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR60080CT

  • Description:DIODE MOD SCHOTT 80V 300A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR60080CT

MBR60080CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR60080CT is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 80 V and an average forward current of 600 A per package. It features a Twin Tower package design with a maximum forward voltage of 0.84 V per leg at Tj = 25 °C. The device supports an operating temperature range from -55 °C to +150 °C and provides a peak forward surge current capability of 4000 A per leg. Thermal resistance from junction to case is 0.28 °C/W per leg.

Diode Arrays Feature Summary

  • High surge current capability
  • Twin Tower package configuration
  • Not ESD sensitive

Diode Arrays Applications

  • Power conversion systems
  • DC-DC converters
  • Inverter circuits

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation, as variations such as (R) indicate reversed leads. Confirm RoHS compliance status through manufacturer datasheets or authorized distributors. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions.

Diode Arrays Selection Notes

Select this component when high average current handling and low forward voltage drop are required in a compact Twin Tower form factor. Evaluate thermal performance based on the 0.28 °C/W junction-to-case resistance. Consider the 80 V blocking voltage rating relative to system peak reverse voltages to ensure adequate safety margins during operation.

Diode Arrays Part Context

This module belongs to the MBR600 series of silicon power Schottky rectifiers manufactured by GeneSiC Semiconductor. The series includes variants ranging from 45 V to 100 V reverse voltage ratings, all sharing the same 600 A average forward current capacity and Twin Tower packaging style for standardized mounting solutions.

Diode Arrays Replacement Considerations

Direct substitutes within the same series include MBR60045CT and MBR60060CT for lower voltage applications. For higher voltage requirements, MBR600100CT is available. Verify lead orientation differences if considering the (R) suffix variants.

MBR60080CTMBR60080CT
$91.69
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