MBRB2090CT-M3/4W

Diode Arrays Overview

The MBRB2090CT-M3/4W is a dual common-cathode high-voltage Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes Trench MOS Schottky technology to achieve lower power losses and high efficiency. The device features a maximum repetitive peak reverse voltage of 90 V and a total maximum average forward rectified current of 20 A, distributed as 10 A per diode. It operates within a junction temperature range of -65 °C to +150 °C and supports a peak forward surge current of 150 A.

Diode Arrays Feature Summary

• Trench MOS Schottky technology for reduced power loss
• Low forward voltage drop characteristics
• High forward surge capability
• High frequency operation suitability

Diode Arrays Applications

• Switching mode power supplies
• Freewheeling diodes
• DC/DC converters
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix /4W corresponds to the tube packaging configuration containing 50 units per tube, distinct from the tape and reel options. Confirm compliance with RoHS standards and halogen-free material categorization during procurement. Ensure the component meets JESD 201 class 1A whisker test requirements. Validate that the thermal management design accommodates the specified thermal resistance values for the D2PAK package.

Diode Arrays Selection Notes

Select this component when a dual common-cathode configuration is required for 90 V applications. The device offers a balance of low forward voltage and high surge current handling. Consider the thermal resistance parameters for heat sink design. Verify that the operating junction temperature range aligns with the system's environmental constraints. Compare against similar models like the MBRB20100CT-M3 if higher voltage ratings are needed.

Diode Arrays Part Context

This part belongs to the MBRB2090CT-M3 series of dual common-cathode Schottky rectifiers. It shares the same die and electrical characteristics as the MBRB2090CT-M3/8W but differs in packaging format. The series is designed for high-frequency rectification and freewheeling duties. Vishay General Semiconductor - Diodes Division produces these devices using advanced Trench MOS technology.

Diode Arrays Replacement Considerations

MBRB2090CT-M3/8W

Diode Arrays FAQ

What is the maximum instantaneous forward voltage per diode at 10 A?

The maximum instantaneous forward voltage is 0.80 V at 25 °C case temperature and 10 A forward current.

Does the M3 suffix indicate any specific material properties?

Yes, the M3 suffix indicates the product is halogen-free, RoHS-compliant, and meets the JESD 201 class 1A whisker test.

What is the typical thermal resistance from junction to case?

The typical thermal resistance from junction to case (RθJC) is 2.0 °C/W per diode.