MBRB20H45CT-E3/45

Diode Arrays Overview

The MBRB20H45CT-E3/45 is a dual common-cathode Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes high barrier technology to deliver low forward voltage drop and low leakage current, ensuring high efficiency and reduced power losses. The device features a TO-263AB (D2PAK) surface-mount package with a maximum repetitive peak reverse voltage of 45 V and an average forward rectified current of 10 A per diode. It supports a non-repetitive avalanche energy of 80 mJ and operates within a junction temperature range of -65 °C to +175 °C.

Diode Arrays Feature Summary

• High barrier technology for improved high-temperature performance
• Guardring structure provides overvoltage protection
• Low forward voltage drop minimizes power losses
• Low leakage current enhances overall system efficiency

Diode Arrays Applications

• Low voltage, high frequency rectification in switching mode power supplies
• Freewheeling diodes in DC-to-DC converters
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific suffix against official documentation to confirm compliance requirements. The E3 suffix indicates consumer grade compliance with RoHS 2002/95/EC and WEEE 2002/96/EC directives. Confirm that the HE3 suffix is not required if automotive-grade reliability or AEC-Q101 qualification is necessary for the target application environment.

Diode Arrays Selection Notes

Select this component when a dual common-cathode configuration is required for synchronous rectification or polarity protection. Ensure the thermal design accommodates the specified thermal resistance from junction to case. Verify that the 45 V reverse voltage rating provides adequate margin for the peak inverse voltage present in the circuit under all operating conditions.

Diode Arrays Part Context

This part belongs to the MBR(F,B)20HxxCT series, which includes variants rated for 35 V, 50 V, and 60 V. All members share identical electrical characteristics regarding current handling and thermal properties, differing only in their maximum repetitive peak reverse voltage ratings. The series is designed for general-purpose high-efficiency rectification applications.

Diode Arrays Replacement Considerations

MBR20H45CT-E3/45

Diode Arrays FAQ

What is the maximum non-repetitive avalanche energy rating?

The device can withstand a non-repetitive avalanche energy of 80 mJ per diode at 25 °C with an avalanche current of 4 A and an inductance of 10 mH.

How does the guardring feature benefit the device?

The integrated guardring structure provides overvoltage protection, enhancing the robustness of the rectifier against transient voltage spikes.

Is the component suitable for high-frequency operation?

Yes, the Schottky barrier technology enables high-frequency operation, making it ideal for use in switching mode power supplies and DC-to-DC converters.