Diode Arrays MBRB20H60CTHE3/45 product image

MBRB20H60CTHE3/45

  • Description:DIODE ARR SCHOTT 60V 10A TO263AB
  • Series:-

SKU:61f6159c14ac Category: Brand:

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MBRB20H60CTHE3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 60V 10A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRB20H60CTHE3/45

  • Description:DIODE ARR SCHOTT 60V 10A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:710 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 60 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MBRB20H60CTHE3/45

MBRB20H60CTHE3/45

Diode Arrays Overview

The MBRB20H60CTHE3/45 is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes high barrier technology for improved high-temperature performance and features guardring overvoltage protection. The device is housed in a TO-263AB (D2PAK) surface-mount package. Key electrical parameters include a maximum repetitive peak reverse voltage of 60 V, a total maximum average forward rectified current of 20 A (10 A per diode), and a peak forward surge current of 150 A. The maximum instantaneous forward voltage is 0.71 V at 20 A and 25 °C, with a maximum reverse leakage current of 100 μA at rated VR and 25 °C. The operating junction temperature range extends from -65 °C to 175 °C.

Diode Arrays Feature Summary

  • High barrier technology provides enhanced high-temperature performance and low power loss.
  • Guardring structure ensures robust overvoltage protection capabilities.
  • Low forward voltage drop contributes to high efficiency in switching applications.
  • Qualified under AEC-Q101 standards for automotive reliability requirements.

Diode Arrays Applications

  • Low voltage, high frequency rectification in switching mode power supplies
  • Freewheeling diodes in DC/DC converters
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific suffix HE3 confirms AEC-Q101 qualification and compliance with JESD 201 class 2 whisker testing standards. Confirm the package designation matches the required TO-263AB footprint. Ensure the reverse voltage rating aligns with the circuit's maximum working peak reverse voltage requirements. Check for RoHS compliance documentation corresponding to the E3 suffix.

Diode Arrays Selection Notes

Select this component when a dual common cathode configuration is required for synchronous rectification or freewheeling paths. The TO-263AB package offers a balance of thermal dissipation and surface-mount convenience. Consider the 60 V rating against potential voltage spikes in the application. Evaluate the thermal resistance characteristics relative to the available heatsinking or PCB copper area.

Diode Arrays Part Context

This part belongs to the MBRB20HxxCT family of dual Schottky barrier rectifiers designed for general-purpose high-efficiency applications. The series includes variants with different voltage ratings ranging from 35 V to 60 V. The MBRB prefix specifically denotes the TO-263AB surface-mount package format within the broader MBR20Hxx product line.

Diode Arrays Replacement Considerations

Vishay MBRB20H60CT-E3/45

Diode Arrays FAQ

What is the difference between the E3 and HE3 suffixes?

The HE3 suffix indicates that the device meets AEC-Q101 qualification standards and complies with JESD 201 class 2 whisker testing, whereas the E3 suffix denotes RoHS compliance without the specific automotive qualification.

How does the guardring feature benefit the device?

The guardring structure provides overvoltage protection, enhancing the reliability of the device during transient voltage events or stress conditions beyond normal operation.

What is the maximum junction temperature for this component?

The maximum operating junction temperature is 175 °C, allowing for operation in high-temperature environments typical of modern electronic assemblies.

MBRB20H60CTHE3/45MBRB20H60CTHE3/45

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