SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
MBRB25H35CTHE3_B/P is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 35V 15A TO263AB. Review the specifications below when checking this part for your BOM.
The MBRB25H35CTHE3_B/P is a dual common cathode Schottky rectifier utilizing Vishay's high barrier technology. It features a D2PAK (TO-263AB) surface-mount package with a maximum repetitive peak reverse voltage of 35 V and a total average forward rectified current of 30 A (15 A per diode). The device offers a low forward voltage drop, reaching a maximum of 0.64 V at 15 A and 25 °C, alongside a maximum reverse leakage current of 100 μA at rated voltage. It supports a peak forward surge current of 150 A and operates within a junction temperature range of -65 to +175 °C.
Verify the specific suffix configuration against the official datasheet to ensure compliance with RoHS standards and halogen-free material requirements. Confirm that the ordering code matches the desired packaging format, as delivery modes vary between tube and tape-and-reel options. Cross-reference the part number with the manufacturer's latest documentation to validate current production status and regional availability constraints.
Select this component for applications requiring high efficiency and robust thermal performance in compact surface-mount designs. The dual common cathode configuration simplifies circuit layout for synchronous rectification or polarity protection tasks. Ensure the operating case temperature remains within limits to maintain the specified 30 A current rating, considering the thermal resistance characteristics provided in the datasheet.
This device belongs to the MBRB25HxxCT series, which includes variants with 45 V and 60 V reverse voltage ratings. All members share identical mechanical dimensions and thermal characteristics while differing in blocking voltage capabilities. The series is designed for high-frequency power conversion applications where low conduction losses are critical.
Direct substitutes include MBRB25H45CTHE3_B/P and MBRB25H60CTHE3_B/P from the same series, offering higher voltage ratings with identical current and package specifications.
The maximum operating junction temperature is 175 °C.
Yes, the device is AEC-Q101 qualified.
The thermal resistance (RθJC) is 1.5 °C/W per diode.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.