MBRB25H60CT-E3/45

Description：DIODE ARR SCHOTT 60V 15A TO263AB
Series：-

SKU:ba19a45f8c74 Category: Diode Arrays Brand: Vishay General Semiconductor - Diodes Division

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Product introduction

MBRB25H60CT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 60V 15A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRB25H60CT-E3/45

Description：DIODE ARR SCHOTT 60V 15A TO263AB
Series：-
Mfr：Vishay General Semiconductor - Diodes Division
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：60 V
Current - Average Rectified (Io) (per Diode)：15A
Voltage - Forward (Vf) (Max) @ If：700 mV @ 15 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：100 µA @ 60 V
Operating Temperature - Junction：-65°C ~ 175°C
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263AB (D2PAK)
Grade：Automotive
Qualification：AEC-Q101

Diode Arrays datasheet and documents for MBRB25H60CT-E3/45

MBRB25H60CT-E3/45

Diode Arrays Overview

The MBRB25H60CT-E3/45 is a dual common cathode Schottky rectifier utilizing Vishay's High Barrier Technology. It features a TO-263AB (D2PAK) surface-mount package with a maximum repetitive peak reverse voltage of 60 V and an average forward rectified current of 15 A per diode. The device exhibits a low forward voltage drop of 0.60 V at 15 A and 125 °C, alongside a maximum reverse leakage current of 100 µA at rated voltage. It supports a peak forward surge current of 150 A and operates within a junction temperature range of -65 °C to +175 °C.

Diode Arrays Feature Summary

High Barrier technology ensures improved high-temperature performance and lower power losses for high efficiency.
Guardring structure provides overvoltage protection capabilities.
Low forward voltage drop and low leakage current characteristics optimize switching mode power supply performance.
Qualified under AEC-Q101 automotive standards for reliability.

Diode Arrays Applications

Low voltage, high frequency rectification in switching mode power supplies
Freewheeling diodes in DC/DC converters
Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific suffix /45 indicates tube packaging when sourcing. Confirm RoHS compliance status via the E3 designation. Check for AEC-Q101 qualification requirements which utilize the HE3 suffix variant. Validate thermal resistance parameters against application constraints before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component for applications requiring robust high-temperature operation up to 175 °C junction temperature. The TO-263AB package facilitates efficient heat dissipation through the exposed pad. Ensure circuit design accounts for the 60 V reverse voltage rating and 15 A per-diode current capacity. Consider the low forward voltage characteristic for minimizing conduction losses in low-voltage output stages.

Diode Arrays Part Context

This part belongs to the MBRB25HxxCT series of dual common cathode Schottky rectifiers from Vishay General Semiconductor. The series utilizes High Barrier Technology to enhance thermal stability compared to standard silicon Schottky devices. The MBRB prefix specifically denotes the TO-263AB surface-mount package configuration within the broader MBR25HxxCT family.