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MBRB25H60CTHE3_B/P is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 60V 15A TO263AB. Review the specifications below when checking this part for your BOM.
The MBRB25H60CTHE3_B/P is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes high barrier technology to deliver improved high-temperature performance and low forward voltage drop. The device features a D2PAK (TO-263AB) package with a maximum repetitive peak reverse voltage of 60 V, a total average forward rectified current of 30 A, and a non-repetitive peak forward surge current of 150 A. It operates within a junction temperature range of -65 °C to +175 °C.
Verify the specific suffix '_B/P' against official documentation, as standard datasheets list 'HM3/I'. Confirm RoHS compliance and halogen-free status via the manufacturer's product compliance database. Ensure the component meets JESD 201 class 2 whisker test requirements if applicable to the design.
Select this component for applications requiring high-frequency operation and low power losses. The D2PAK package facilitates efficient heat dissipation through the exposed pad. Verify that the 60 V rating accommodates transient voltages in the target circuit. Consider the 175 °C maximum junction temperature for high-thermal environments.
This part belongs to the MBRB25HxxCT series, which includes variants with 35 V and 45 V ratings. All members share identical electrical characteristics except for the maximum repetitive peak reverse voltage. The series is designed for surface-mount assembly using the TO-263AB footprint.
Direct substitutes include MBRB25H60CTHM3/I from the same manufacturer family. Cross-brand replacements must match the 60 V reverse voltage, 30 A current rating, and D2PAK package dimensions.
The maximum operating junction temperature is +175 °C.
Yes, the component is AEC-Q101 qualified.
The thermal resistance (RθJC) per diode is 1.5 °C/W.
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