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MBRB30H60CTT4G is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY SCHOTT 60V 15A D2PAK. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for MBRB30H60CTT4G
- Description：DIODE ARRAY SCHOTT 60V 15A D2PAK
- Series：SWITCHMODE™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：60 V
- Current - Average Rectified (Io) (per Diode)：15A
- Voltage - Forward (Vf) (Max) @ If：620 mV @ 15 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：300 µA @ 60 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
Diode Arrays datasheet and documents for MBRB30H60CTT4G
Diode Arrays Overview
The MBRB30H60CTT4G is a Switch-mode Power Rectifier featuring dual Schottky barrier diodes in a common cathode configuration. It supports a peak repetitive reverse voltage of 60 V and an average rectified forward current of 15 A per leg, totaling 30 A. The device operates at junction temperatures up to 175°C with a maximum instantaneous forward voltage of 0.78 V at 30 A. It offers high surge capacity with a nonrepetitive peak surge current of 260 A and controlled avalanche energy of 350 mJ.
Diode Arrays Feature Summary
- Low forward voltage for high efficiency
- Guard-ring structure for stress protection
- AEC-Q101 qualified and PPAP capable
Diode Arrays Applications
- Power Supply Output Rectification
- Power Management
- Instrumentation
Diode Arrays Procurement Notes
Verify the specific ordering suffix T4G to confirm the D2PAK package and tape-and-reel shipping format. Ensure compatibility with lead-free manufacturing processes as the device is Pb-Free and Halide Free. Confirm that the application environment does not exceed the specified thermal resistance limits for the D2PAK case.
Diode Arrays Selection Notes
Select this component for switch-mode applications requiring low power loss and high surge capacity. The D2PAK package provides lower thermal resistance compared to the I2PAK variant. Verify that the operating junction temperature remains within the -55°C to +175°C range and that the reverse voltage requirements do not exceed 60 V.
Diode Arrays Part Context
This part belongs to the MBRB30H60CT family of Schottky Barrier Rectifiers from onsemi. It shares electrical characteristics with the MBRB30H60CT-1G but differs in packaging and shipping configuration. The T4G suffix specifically denotes the D2PAK (TO-263) surface-mount package supplied in tape and reel format.
Diode Arrays Replacement Considerations
MBRB30H60CT-1G
Diode Arrays FAQ
What is the controlled avalanche energy rating?
The device has a controlled avalanche energy rating of 350 mJ.
Is this device suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, though the NRVBB prefix version is specifically noted for unique site and control change requirements.
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