Diode Arrays MBRB41H100CT-1G product image

MBRB41H100CT-1G

$0.73
  • Description:DIODE ARRAY SCHOT 100V 20A TO262
  • Series:SWITCHMODE™

SKU:4d98a8b712b5 Category: Brand:

  
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MBRB41H100CT-1G is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY SCHOT 100V 20A TO262. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRB41H100CT-1G

  • Description:DIODE ARRAY SCHOT 100V 20A TO262
  • Series:SWITCHMODE™
  • Mfr:onsemi
  • Package:Tube,Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):20A
  • Voltage - Forward (Vf) (Max) @ If:800 mV @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 µA @ 100 V
  • Operating Temperature - Junction:175°C (Max)
  • Mounting Type:Through Hole
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package:TO-262 (I2PAK)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRB41H100CT-1G

MBRB41H100CT-1G

Diode Arrays Overview

The MBRB41H100CT-1G is a silicon Schottky barrier rectifier manufactured by onsemi, housed in an I2PAK (TO-263AB) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive peak reverse voltage of 100 V and a continuous forward current rating of 20 A per diode. The device exhibits a typical forward voltage of 950 mV at rated current and supports a non-repetitive peak forward surge current of 300 A. Designed for high reliability, it operates within a junction temperature range of -65 °C to +175 °C and holds AEC-Q101 qualification for automotive applications.

Diode Arrays Feature Summary

  • Dual anode common cathode configuration enables efficient bridge rectification in compact surface-mount designs.
  • Ultra-fast switching characteristics minimize reverse recovery time and associated power losses.
  • High thermal stability allows reliable operation at elevated junction temperatures up to 175 °C.
  • AEC-Q101 qualified for robust performance in demanding automotive electronic environments.

Diode Arrays Applications

  • Automotive DC-DC converter circuits
  • Power supply freewheeling applications
  • Reverse polarity protection systems

Diode Arrays Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact electrical tolerances and packaging variations. Confirm current production status and end-of-life notifications directly with onsemi or authorized distributors prior to design finalization. Ensure compliance with RoHS and REACH directives relevant to your target market regulations.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for high-current, low-voltage drop applications. The I2PAK package provides superior thermal dissipation compared to smaller SMD options. Consider the 100 V rating and 20 A current capacity relative to system load requirements and ambient operating conditions.

Diode Arrays Part Context

This part belongs to the MBRB H-Series of Schottky rectifiers from onsemi. The series is characterized by its use of silicon technology for improved high-temperature performance compared to standard Schottky devices. The MBRB41H100CT-1G specifically targets applications requiring high efficiency and ruggedness in automotive and industrial power management systems.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative components such as the NRVBB41H100CTT4G only if pinout, voltage, and current ratings match exactly and functional equivalence is validated through official datasheet comparison.

MBRB41H100CT-1GMBRB41H100CT-1G
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