MBRF10100CT-E3/4W

$0.42

Description：DIODE ARR SCHOT 100V 5A ITO220AB
Series：-

SKU:e2e958d00d5d Category: Diode Arrays Brand: Vishay General Semiconductor - Diodes Division

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Product introduction

MBRF10100CT-E3/4W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 100V 5A ITO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRF10100CT-E3/4W

Description：DIODE ARR SCHOT 100V 5A ITO220AB
Series：-
Mfr：Vishay General Semiconductor - Diodes Division
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：100 V
Current - Average Rectified (Io) (per Diode)：5A
Voltage - Forward (Vf) (Max) @ If：850 mV @ 5 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：100 µA @ 100 V
Operating Temperature - Junction：-65°C ~ 150°C
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack, Isolated Tab
Supplier Device Package：ITO-220AB
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBRF10100CT-E3/4W

MBRF10100CT-E3/4W

Diode Arrays Overview

The MBRF10100CT-E3/4W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a common cathode configuration in an ITO-220AB package. The device supports a maximum repetitive peak reverse voltage of 100 V and a total average forward rectified current of 10 A, with 5.0 A per diode at a case temperature of 105 °C. It exhibits a low forward voltage drop of 0.75 V at 5.0 A and 125 °C, alongside a peak forward surge current capability of 120 A. The operating junction temperature range spans from -65 °C to +150 °C.

Diode Arrays Feature Summary

Utilizes Trench MOS Schottky technology for lower power losses and high efficiency
Provides low forward voltage drop characteristics
Offers high forward surge current capability
Designed for high frequency operation

Diode Arrays Applications

High frequency rectification in switching mode power supplies
Freewheeling diodes
DC/DC converters
Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance details. The E3 designation indicates halogen-free, RoHS-compliant status and commercial grade classification. Confirm that the 4W packaging code corresponds to the required tube quantity of 50 units per package. Ensure the component meets JESD 201 class 1A whisker test requirements if applicable to your design specifications.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for high voltage applications up to 100 V. The TMBS technology offers superior performance compared to standard Schottky diodes regarding forward voltage drop and switching speed. Consider the thermal resistance and derating curves for proper heatsink selection to maintain junction temperatures within the specified operational limits during continuous conduction.

Diode Arrays Part Context

This part belongs to the MBRF1090CT-M3 and MBRF10100CT-M3 series of Dual High Voltage Trench MOS Barrier Schottky Rectifiers. These devices are designed to replace standard silicon rectifiers in applications requiring higher efficiency and faster switching speeds. The ITO-220AB package provides robust mechanical mounting and effective thermal dissipation capabilities for medium power applications.