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MBRF10H90CT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 90V 5A ITO220AB. Review the specifications below when checking this part for your BOM.
The MBRF10H90CT-E3/45 is a dual common cathode high voltage Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes High Barrier Technology to deliver improved high-temperature performance and low power loss. The device features a maximum repetitive peak reverse voltage of 100 V and a total maximum average forward rectified current of 10 A (5 A per diode). Packaged in an ITO-220AB case, it provides electrical isolation from the heatsink. Key electrical characteristics include a peak forward surge current of 150 A and a maximum operating junction temperature of 175 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and compliance status. Confirm that the component meets the required environmental standards for your application. Check for any product change notices or end-of-life announcements prior to finalizing procurement decisions.
Select this component when high-frequency operation and elevated temperature tolerance are required. The ITO-220AB package offers necessary isolation for grounded heatsink applications. Ensure the design accounts for the 175 °C maximum junction temperature rating and the 150 A surge current capability during transient conditions.
This part belongs to the MBR10HxxCT series of dual common cathode Schottky rectifiers. It shares the same internal die and electrical specifications as the MBR10H100CT (TO-220AB) and MBRB10H100CT (D2PAK), differing only in the physical package configuration. The 'E3' suffix indicates RoHS compliance and matte tin plating.
MBR10H100CT-E3/45
The device provides an isolation voltage of 1500 V AC from the terminal to the heatsink.
Yes, it meets MSL level 1 per J-ST D-020 with a maximum peak soldering temperature of 245 °C.
The typical thermal resistance from junction to case is 5.2 °C/W per diode.
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