MBRF20100CT-E3/4W

Diode Arrays Overview

The MBRF20100CT-E3/4W is a dual common-cathode high voltage Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes TMBS technology to achieve lower power losses and high efficiency. The device features a maximum average forward rectified current of 2 x 10 A per diode, with a total device rating of 20 A at a case temperature of 133 °C. It supports a maximum repetitive peak reverse voltage of 100 V and a peak forward surge current of 150 A. The component operates within a junction and storage temperature range of -65 to +150 °C.

Diode Arrays Feature Summary

• Trench MOS Schottky technology for reduced power loss
• Low forward voltage drop for high efficiency
• High forward surge current capability
• Suitable for high frequency operation

Diode Arrays Applications

• Switching mode power supplies
• Freewheeling diodes
• DC/DC converters
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering code suffix against official documentation to confirm package type and delivery mode. Confirm RoHS compliance status and material categorization definitions via manufacturer resources. Validate thermal resistance parameters for your specific mounting configuration before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component for designs requiring high-frequency rectification with low forward voltage characteristics. Ensure the application maintains case temperatures within limits to support the rated 20 A total current. Verify that the 100 V reverse voltage rating exceeds the circuit's peak working reverse voltage requirements.

Diode Arrays Part Context

This part belongs to the MBR20xxxCT-E3 family of dual common-cathode Schottky rectifiers. It shares core electrical specifications with the MBR20100CT-E3 (TO-220AB) and MBRB20100CT-E3 (D2PAK), differing primarily in the ITO-220AB package form factor. The E3 suffix indicates lead-free construction compliant with RoHS standards.

Diode Arrays Replacement Considerations

Direct replacements include MBR20100CT-E3/4W and MBRB20100CT-E3/4W from the same series. These alternatives share identical electrical ratings but utilize TO-220AB or D2PAK packages respectively. Verify mechanical footprint compatibility before substitution.

Diode Arrays FAQ

What is the typical thermal resistance junction-to-case for the MBRF20100CT?

The typical thermal resistance junction-to-case (RθJC) for the MBRF variant is 3.5 °C/W.

Does the MBRF20100CT meet moisture sensitivity level requirements?

Yes, it meets MSL level 1 per J-ST-D-020, with a maximum peak reflow temperature of 245 °C for the TO-263AB package.

What is the maximum non-repetitive avalanche energy rating?

The non-repetitive avalanche energy is rated at 130 mJ per diode at TJ = 25 °C with an inductance of 60 mH.