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MBRF20L45CTG is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARR SCHOTT 45V 10A TO220FP. Review the specifications below when checking this part for your BOM.
The MBRF20L45CTG is a silicon Schottky rectifier manufactured by onsemi, housed in an isolated TO-220FP (CASE 221D-03) three-pin through-hole package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 45V and an average forward current rating of 10A. The device exhibits a typical forward voltage drop of 500mV at 10A and supports a peak non-repetitive forward surge current of 90A at 20A conditions. Operating temperatures range from -65°C to +175°C junction temperature.
Verify component authenticity against official onsemi documentation due to potential counterfeit risks in the passive semiconductor market. Confirm RoHS compliance status via the manufacturer's material declaration as regulatory requirements evolve. Ensure the TO-220FP package variant matches the specific thermal and mechanical constraints of the target PCB layout before finalizing procurement orders.
Select this component when low forward voltage drop is critical for system efficiency at moderate current levels. The TO-220FP package provides robust thermal dissipation capabilities suitable for board-level heatsinking. Verify that the 45V reverse voltage rating exceeds the maximum circuit transient voltages to prevent breakdown. Consider the 10A continuous current limit relative to ambient temperature derating curves provided in the datasheet.
This part belongs to the MBRF series of high-efficiency Schottky rectifiers designed for general-purpose power conversion. The 'L' designation typically indicates optimized low forward voltage characteristics within the family. It serves as a replacement for older standard rectifier technologies where switching speed and conduction losses are primary design drivers.
MBRF2045CTG: Verify if the 570mV forward voltage meets thermal requirements compared to the 500mV specification.
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