MBRS10H200CT MNG

Diode Arrays Overview

The MBRS10H200CT MNG is a dual common cathode Schottky barrier rectifier manufactured by Taiwan Semiconductor Corporation. It features a 10 A continuous forward current rating and a 200 V maximum repetitive peak reverse voltage. The device utilizes metal-silicon junction technology for majority carrier conduction, resulting in negligible reverse recovery time and low forward voltage drop. It is housed in a TO-220AB through-hole package with a plastic encapsulant classified as UL 94V-0. The component operates within a temperature range of -65°C to +175°C.

Diode Arrays Feature Summary

• Dual common cathode configuration for efficient power conversion
• Majority carrier conduction ensures fast switching performance
• Low forward voltage drop reduces power loss and heat generation
• High thermal stability supports operation up to 175°C

Diode Arrays Applications

• DC-DC converters
• Free-wheeling diodes in inductive circuits
• Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific suffix 'MNG' against official Taiwan Semiconductor documentation to confirm exact packaging or marking variations. Ensure the requested part matches the standard MBRS10H200CT electrical specifications. Confirm RoHS compliance status if required for your assembly process. Cross-reference the manufacturer's latest datasheet for any updates on pinout or thermal characteristics before finalizing procurement.

Diode Arrays Selection Notes

Select this component for applications requiring high efficiency and fast switching speeds at moderate voltage levels. The dual common cathode design simplifies circuit layout for synchronous rectification or bridge configurations. Consider the TO-220AB package for adequate heat dissipation without additional heatsinking in many standard applications. Verify that the 10 A current rating meets the peak and RMS requirements of the target load.

Diode Arrays Part Context

This device belongs to the MBRS series of Schottky rectifiers from Taiwan Semiconductor. The series is designed to replace traditional silicon rectifiers where speed and efficiency are critical. The 'CT' designation indicates a dual common cathode arrangement, while the '10H' specifies the 10 Ampere current class. This family offers improved performance over standard PN junction diodes in terms of reverse recovery time.

Diode Arrays Replacement Considerations

Check for direct equivalents such as the MBR10H200CT from other manufacturers like Vishay or General Semiconductor. Ensure substitute parts maintain the same TO-220AB footprint and pin configuration. Verify that alternative components meet or exceed the 200 V reverse voltage and 10 A forward current ratings.