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MBRS3045CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOTT 45V 30A TO263AB. Review the specifications below when checking this part for your BOM.
The MBRS3045CT is a dual common-cathode Schottky barrier surface mount rectifier manufactured by Taiwan Semiconductor. It features a TO-263AB (D2PAK) package with two silicon elements. Key electrical parameters include a repetitive peak reverse voltage (VRRM) of 45 V and an average forward current (IF) of 30 A. The maximum non-repetitive peak forward surge current (IFSM) is 220 A. The junction temperature range is -55 to +150 °C. Typical forward voltage is 0.70 V at 15 A and 0.90 V at 30 A, both at 25 °C.
Verify the ordering code matches MBRS3045CT for the TO-263AB package. Confirm packing quantity is 800 units per tape and reel. Ensure RoHS compliance and halogen-free status meet project requirements. Check date code and factory code markings on the device surface. Validate thermal resistance values against system cooling constraints.
Select this component for low-voltage, high-frequency rectification where low forward voltage drop is critical. The TO-263AB package suits automated placement processes. Consider the 45 V rating for appropriate headroom in 5 V or 12 V output stages. Evaluate thermal performance using the specified junction-to-case resistance for heatsinking needs.
This part belongs to the MBRS series of Schottky rectifiers from Taiwan Semiconductor. It utilizes a dual common-cathode configuration within a single surface mount package. The technology focuses on reducing power losses compared to standard PN junction diodes. The TO-263AB form factor allows for efficient heat dissipation in compact PCB layouts.
Cross-reference with other 30 A, 45 V dual Schottky rectifiers in TO-263AB packages. Verify pinout compatibility, specifically the common cathode arrangement. Compare forward voltage characteristics and thermal resistance values to ensure equivalent performance in the target application.
The maximum operating junction temperature is +150 °C.
Yes, the device includes a guard ring structure for overvoltage protection.
The typical forward voltage is 0.90 V when the forward current is 30 A and the junction temperature is 25 °C.
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