MBRT120200

Diode Arrays Overview

The MBRT120200 is a silicon power Schottky diode module from the MBRT120 series, manufactured by GeneSiC Semiconductor. It features a Three Tower package with an electrically isolated base plate and operates within a junction temperature range of -55°C to +150°C. The device provides a repetitive peak reverse voltage (VRRM) of 200 V and supports an average forward current (IF(AV)) of 120 A per package. Key electrical characteristics include a maximum instantaneous forward voltage of 0.92 V at Tj = 150°C and a peak forward surge current (IFSM) of 800 A for an 8.3 ms half-sine pulse.

Diode Arrays Feature Summary

• High surge capability designed for demanding transient conditions
• Isolation type package featuring an electrically isolated base plate
• Not ESD sensitive for simplified handling

Diode Arrays Applications

• Power conversion systems requiring high surge tolerance
• DC-DC converter circuits utilizing isolated base plates
• Industrial power modules operating in wide temperature ranges

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation before procurement. Confirm that the component matches the required voltage rating and current capacity for your application. Check for any regional shipping restrictions or export control requirements associated with this semiconductor product. Ensure proper thermal management solutions are integrated given the specified thermal resistance values.

Diode Arrays Selection Notes

Select this component when a silicon-based Schottky rectifier with high surge capability is required. The isolated base plate design facilitates mounting on insulated heat sinks without additional insulators. Consider the thermal resistance of 0.80 °C/W per leg for heat dissipation planning. Verify compatibility with the intended switching frequency and load profile to ensure reliable operation within the specified temperature limits.

Diode Arrays Part Context

This module belongs to the MBRT120 series, which includes variants ranging from 150 V to 200 V VRRM. All devices in this family share the same Three Tower package form factor and 120 A average forward current rating. The series is characterized by its isolation type construction and robust surge performance suitable for general power electronics applications.

Diode Arrays Replacement Considerations

Direct replacements must match the 200 V VRRM, 120 A IF(AV), and Three Tower package dimensions. Verify terminal configuration as 'R' devices have reversed leads. Ensure the substitute component maintains equivalent thermal resistance and surge current ratings.