MBRT12030R

Diode Arrays Overview

The GeneSiC MBRT12030R is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 30 V and an average forward current of 120 A per package. It utilizes a three-tower isolation type package with an electrically isolated base plate. The device features a maximum instantaneous forward voltage of 0.70 V at Tj = 25 °C and IFM = 60 A, alongside a peak forward surge current capability of 800 A. Thermal resistance from junction to case is specified at 0.80 °C/W per leg. Operating and storage temperature ranges extend from -55 °C to +150 °C.

Diode Arrays Feature Summary

• High surge current capability
• Electrically isolated base plate
• Not ESD sensitive

Diode Arrays Applications

• Power rectification in high-current DC circuits
• Freewheeling applications in switching power supplies
• Industrial power conversion systems

Diode Arrays Procurement Notes

Verify the specific datasheet version corresponding to the MBRT12030R part number before procurement. Confirm that the "R" suffix indicates reversed leads as documented in the official specifications. Ensure thermal management solutions align with the 0.80 °C/W junction-to-case thermal resistance rating. Validate that the 30 V reverse voltage rating meets the system's peak reverse voltage requirements under all operating conditions.

Diode Arrays Selection Notes

Select this component when a low forward voltage drop and high surge tolerance are required in a compact isolation package. The 120 A current rating supports substantial load currents while maintaining efficient operation. The electrically isolated base plate facilitates mounting on grounded heat sinks without electrical shorting. Consider the -55 °C to +150 °C operating range for environments with significant thermal fluctuations.

Diode Arrays Part Context

This module belongs to the MBRT120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series encompasses variants with reverse voltages ranging from 20 V to 40 V, all sharing the same 120 A current rating and three-tower package structure. This family is designed for applications requiring robust performance and electrical isolation in a standardized form factor.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers: None identified.