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MBRT12040R is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 40V 60A 3TOWER. Review the specifications below when checking this part for your BOM.
The GeneSiC MBRT12040R is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 40 V and an average forward current of 120 A per package. It utilizes a Three Tower isolation type package with an electrically isolated base plate. The device features a maximum instantaneous forward voltage of 0.70 V at Tj = 25 °C and supports a peak forward surge current of 800 A. Thermal resistance from junction to case is 0.80 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.
Verify the specific part number suffix against official datasheets, as variations may exist. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation within the stated temperature range.
Select this component when a low forward voltage drop and high surge current capacity are required in a compact isolation package. The 40 V rating suits low-voltage high-current applications. Verify that the system's thermal environment allows the junction temperature to remain within the -55 °C to +150 °C operating limits under maximum load conditions.
This module belongs to the MBRT120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series covers voltage ratings from 20 V to 40 V, sharing common mechanical dimensions and thermal characteristics across variants. The 'R' designation indicates reversed leads compared to standard configurations.
Cross-reference with other MBRT120 series variants such as MBRT12030R or MBRT12035R if voltage ratings differ. Verify pinout compatibility due to lead reversal differences between standard and 'R' suffix packages before substitution.
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