Diode Arrays MBRT200100R product image

MBRT200100R

$70.04
  • Description:DIODE MOD SCHOT 100V 100A 3TOWER
  • Series:-

SKU:04dd84dc9557 Category: Brand:

  
  • Quantity
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MBRT200100R is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 100V 100A 3TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRT200100R

  • Description:DIODE MOD SCHOT 100V 100A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):100A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRT200100R

MBRT200100R

Diode Arrays Overview

The MBRT200100R is a silicon power Schottky diode module from the GeneSiC Semiconductor MBRT200 series. It features a Three Tower package with an electrically isolated base plate and screw mount installation. The device supports a repetitive peak reverse voltage of 100 V and an average forward current of 200 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 0.84 V, a thermal resistance junction-to-case of 0.45 °C/W per leg, and a peak forward surge current of 1500 A. The operating temperature range spans from -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability for robust performance under transient conditions
  • Electrically isolated base plate within the Three Tower package design
  • Not sensitive to electrostatic discharge (ESD)

Diode Arrays Applications

  • DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific suffix 'R' indicates reversed leads configuration as documented in the datasheet. Confirm the manufacturer designation aligns with Navitas Semiconductor following the acquisition of GeneSiC Semiconductor. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the part number against official distributor catalogs to confirm current availability status.

Diode Arrays Selection Notes

Select this module when high efficiency and low forward voltage drop are required in medium-power applications. The 100 V rating suits low-voltage DC systems. The isolated base plate simplifies heatsinking without additional insulators. Consider the 0.45 °C/W thermal resistance for thermal management calculations. Verify lead orientation compatibility with PCB layout due to the reversed lead configuration associated with the 'R' suffix.

Diode Arrays Part Context

This component belongs to the MBRT200 series of silicon power Schottky diodes. The series includes variants with different voltage ratings such as 45 V, 60 V, 80 V, and 100 V. All variants share the same Three Tower package form factor and similar thermal characteristics. The series is designed for general-purpose rectification in industrial and consumer power electronics.

Diode Arrays Replacement Considerations

Direct substitutes must match the 200 A current rating, 100 V voltage rating, and Three Tower package dimensions. Check if alternative manufacturers offer equivalent thermal resistance and forward voltage specifications. Verify that any replacement also provides an electrically isolated base plate if system grounding requires it.

MBRT200100RMBRT200100R
$70.04
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