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The MBRT600200R is a silicon power Schottky diode module from the MBRT600 series, rated for a repetitive peak reverse voltage of 200 V and an average forward current of 600 A per package. It utilizes a Three Tower package with an electrically isolated base plate. The maximum instantaneous forward voltage is 0.92 V at Tj = 150 °C, while thermal resistance (junction-to-case) is 0.28 °C/W per leg. Operating temperature ranges from -55 °C to +150 °C.
Verify the specific suffix 'R' indicates reversed leads before procurement. Confirm the exact voltage rating matches the application requirement of 200 V. Check for updated discontinuation notices as this component may be subject to lifecycle changes. Ensure mounting hardware compatibility with the Three Tower package dimensions.
Select this module when high current handling up to 600 A is required alongside low forward voltage drop characteristics. The isolated base plate simplifies heatsinking without additional insulators. Consider the reversed lead configuration for PCB layout or busbar connection planning. Evaluate thermal management requirements based on the specified junction-to-case resistance.
This component belongs to the MBRT600 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings from 150 V to 200 V. The 'R' designation specifically denotes a variant with reversed terminal orientation compared to non-R models within the same family.
Direct substitutes include other MBRT600 series modules with matching 200 V ratings and 600 A current capabilities. Verify terminal orientation compatibility if replacing non-R variants. Cross-reference thermal resistance and package dimensions for mechanical fit.