MBRT600200R

MBRT600200R

$99.37
  • Description:DIODE MOD SCHOT 200V 300A 3TOWER
  • Series:-

SKU:5d3693c993fa Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:DIODE MOD SCHOT 200V 300A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:920 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

Download product information

MBRT600200R

Overview

The MBRT600200R is a silicon power Schottky diode module from the MBRT600 series, rated for a repetitive peak reverse voltage of 200 V and an average forward current of 600 A per package. It utilizes a Three Tower package with an electrically isolated base plate. The maximum instantaneous forward voltage is 0.92 V at Tj = 150 °C, while thermal resistance (junction-to-case) is 0.28 °C/W per leg. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

  • Features high surge capability with a robust Three Tower package design.
  • Provides electrical isolation through an isolated base plate configuration.
  • Includes leads that are reversed compared to standard versions in the series.

Applications

  • High-power rectification circuits
  • DC-DC converters
  • Inverter applications

Procurement Notes

Verify the specific suffix 'R' indicates reversed leads before procurement. Confirm the exact voltage rating matches the application requirement of 200 V. Check for updated discontinuation notices as this component may be subject to lifecycle changes. Ensure mounting hardware compatibility with the Three Tower package dimensions.

Selection Notes

Select this module when high current handling up to 600 A is required alongside low forward voltage drop characteristics. The isolated base plate simplifies heatsinking without additional insulators. Consider the reversed lead configuration for PCB layout or busbar connection planning. Evaluate thermal management requirements based on the specified junction-to-case resistance.

Part Context

This component belongs to the MBRT600 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings from 150 V to 200 V. The 'R' designation specifically denotes a variant with reversed terminal orientation compared to non-R models within the same family.

Replacement Considerations

Direct substitutes include other MBRT600 series modules with matching 200 V ratings and 600 A current capabilities. Verify terminal orientation compatibility if replacing non-R variants. Cross-reference thermal resistance and package dimensions for mechanical fit.

MBRT600200RMBRT600200R
$99.37
Buy Now