MBRT60020R

Overview

The GeneSiC Semiconductor MBRT60020R is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 20 V and an average forward current of 600 A per package. It utilizes a Three Tower isolation type package with an electrically isolated base plate. The device features a maximum instantaneous forward voltage of 0.75 V at Tj = 25 °C and a junction-to-case thermal resistance of 0.28 °C/W per leg. Operating temperatures range from -55 °C to +150 °C, and the module supports a peak forward surge current of 4000 A.

Feature Summary

• High surge capability with a peak forward surge current rating of 4000 A
• Isolation type package design featuring an electrically isolated base plate
• Not ESD sensitive construction

Applications

• Power conversion systems requiring high current handling
• Low voltage DC-DC converter topologies
• Freewheeling applications in motor drives

Procurement Notes

Verify the specific electrical parameters against the official datasheet before integration. Confirm that the reversed lead configuration associated with the 'R' suffix matches the PCB layout requirements. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance values under expected operating conditions.

Selection Notes

Select this component when low forward voltage drop and high surge tolerance are required for 20 V applications. The Three Tower package facilitates efficient heat dissipation through the isolated base plate. Consider the reversed terminal orientation inherent to the 'R' designation during mechanical assembly planning.

Part Context

This part belongs to the MBRT600 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series covers voltage ratings from 20 V to 40 V, all sharing a common 600 A average forward current rating and identical thermal characteristics within the family.

Replacement Considerations

MBRT60020 serves as the non-reversed variant within the same series.