MBRTA40035L

Description：DIODE MOD SCHOTT 35V 200A 3TOWER
Series：-

SKU:57c738c2beb2 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MOD SCHOTT 35V 200A 3TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：35 V
Current - Average Rectified (Io) (per Diode)：200A
Voltage - Forward (Vf) (Max) @ If：600 mV @ 200 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：3 mA @ 35 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Three Tower
Supplier Device Package：Three Tower
Grade：-
Qualification：-

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MBRTA40035L

Overview

The GeneSiC Semiconductor MBRTA40035L is a silicon power Schottky diode module designed for high-current applications. It features a three-tower package configuration with a reverse voltage rating of 35 V and an average rectified forward current capacity of 200 A. The device exhibits a typical forward voltage drop of 600 mV at the rated current. Operating temperature range spans from -55 °C to +150 °C junction temperature. This component is classified as obsolete within the manufacturer's portfolio.

Feature Summary

Utilizes low forward voltage silicon Schottky technology to enhance efficiency
Three-tower mechanical structure facilitates robust screw-mount installation
Common cathode dual-diode configuration supports bridge or freewheeling topologies

Applications

High-frequency DC-DC converter circuits
Motor drive freewheeling paths
Industrial power supply rectification

Procurement Notes

Verify end-of-life status and obsolescence notifications prior to design finalization. Confirm availability through authorized distributors for remaining stock. Evaluate alternative components if long-term supply assurance is required for production runs. Check RoHS compliance documentation for regulatory adherence in target markets.

Selection Notes

Select this module when a 35 V reverse voltage rating and 200 A continuous current handling are necessary. Ensure thermal management solutions accommodate the specific heat dissipation requirements of the three-tower package. Verify that the system operating environment remains within the specified -55 °C to +150 °C temperature limits for reliable operation.

Part Context

This component belongs to the GeneSiC Semiconductor MBRTA series of silicon power Schottky diodes. The series emphasizes low forward voltage characteristics suitable for efficient power conversion. The three-tower packaging provides distinct terminal access for simplified circuit board layout and thermal coupling in high-power density designs.