MBRTA40045L

MBRTA40045L

  • Description:DIODE MOD SCHOTT 45V 200A 3TOWER
  • Series:-

SKU:03ea8d0bdfda Category: Brand:

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Product Detailed Parameters

  • Description:DIODE MOD SCHOTT 45V 200A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:600 mV @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 mA @ 45 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MBRTA40045L

Overview

The MBRTA40045L is a Schottky diode array manufactured by GeneSiC Semiconductor. It features a common cathode configuration with two elements housed in a Three Tower chassis mount package. The device supports a repetitive peak reverse voltage of 45 V and a maximum average forward current of 200 A per element. It operates within a temperature range of -55 °C to +150 °C junction temperature.

Feature Summary

  • Common cathode dual-element architecture for efficient power rectification
  • Chassis mount Three Tower package design for robust thermal management
  • High surge capability suitable for demanding industrial environments

Applications

  • Industrial power supply systems
  • DC-DC converter circuits
  • Free-wheeling rectification in motor drives

Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to confirm current production status, as availability may vary. Ensure that the selected component matches the required electrical ratings and mechanical mounting specifications for the target application before procurement.

Selection Notes

Select this component based on its 45 V reverse voltage rating and 200 A current capacity. Consider the Three Tower package for chassis mounting requirements and verify thermal dissipation needs against the specified operating temperature limits.

Part Context

This part belongs to the GeneSiC Schottky diode array series, designed for high-current applications. It utilizes silicon technology to provide fast recovery characteristics and low forward voltage drop, distinguishing it from standard PN-junction rectifiers in power electronics.

Replacement Considerations

Consult official GeneSiC documentation for verified substitute part numbers. Cross-reference electrical parameters and mechanical dimensions when evaluating alternatives.

MBRTA40045LMBRTA40045L

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