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The GeneSiC Semiconductor MBRTA50045R is a silicon Schottky rectifier module designed for high-power applications. It features a three-tower package configuration with a common anode arrangement, containing two elements. The device supports a repetitive peak reverse voltage of 45 V and an average forward current of 250 A. Key electrical specifications include a maximum non-repetitive peak forward surge current of 3000 A and a maximum forward voltage of 0.7 V at 25 °C. The component operates within a temperature range from -55 °C to +150 °C.
Verify the specific manufacturer designation, as sources indicate both GeneSiC Semiconductor and Navitas Semiconductor associations. Confirm the package type matches the Three Tower specification and ensure the common anode configuration aligns with system requirements. Check RoHS compliance status and datasheet revisions before finalizing procurement decisions.
Select this component when a common anode Schottky rectifier with 45 V rating and 250 A capacity is required. The Three Tower package facilitates screw mounting for effective thermal management. Consider the 3000 A surge rating for applications involving high inrush currents or short-circuit protection scenarios.
This part belongs to the GeneSiC MBRTA series of power Schottky diodes. These modules are engineered for high-efficiency power conversion. The Three Tower design allows for compact assembly in high-current industrial environments. The series typically offers low reverse leakage current and fast switching speeds compared to standard PN junction diodes.
Public confirmed substitute part numbers are not available in the provided documentation.