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Product Detailed Parameters
- Description：DIODE MOD SCHOT 100V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：840 mV @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1 mA @ 100 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRTA600100R is a Silicon Power Schottky Diode manufactured by GeneSiC Semiconductor. It features a Three Tower package configuration with a common anode arrangement of two elements. The device supports a repetitive peak reverse voltage of 100V and a maximum average forward current of 300A. Operating temperatures range from -55°C to +150°C. Key electrical characteristics include a fast recovery time of less than 500ns and a forward voltage drop of 880mV at 300A.
Feature Summary
- High surge capability for robust power handling
- ESD insensitive design for enhanced reliability
- Twin tower package structure for efficient thermal management
Applications
- Power supply rectification
- Freewheeling diodes in DC-DC converters
- Inductor discharge circuits
Procurement Notes
Verify the specific suffix 'R' against the official datasheet to confirm lead orientation or pinout variations, as packaging details may differ between standard and reversed configurations. Ensure the component meets RoHS compliance requirements if applicable to your assembly process. Cross-reference the manufacturer part number with the distributor listing to confirm availability status and exact package specifications before ordering.
Selection Notes
Select this component for applications requiring high current capacity up to 300A with low forward voltage drop. The 100V reverse voltage rating suits low-voltage, high-current power conversion systems. Consider the Three Tower package for mounting constraints and thermal dissipation needs. Verify that the operating temperature range of -55°C to +150°C aligns with the environmental conditions of the target application.
Part Context
This part belongs to the MBRT600 series of silicon power Schottky diodes from GeneSiC Semiconductor. The series is designed for high-efficiency power applications, offering a balance of speed and current handling. The MBRTA600100R specifically utilizes a common anode dual-element configuration within the Three Tower package, distinguishing it from single-element variants in the same family.
Replacement Considerations
The MBRT600100R is listed as a related product within the same series but has different voltage ratings (100V vs 150V) and current capacities. Verify compatibility based on specific circuit voltage and current requirements. No direct substitute part numbers are confirmed in the provided documentation.
