MBRTA60040

MBRTA60040

  • Description:DIODE MOD SCHOTT 40V 300A 3TOWER
  • Series:-

SKU:179a0df959b0 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE MOD SCHOTT 40V 300A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):40 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:700 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 40 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MBRTA60040

Overview

The MBRTA60040 is a low forward voltage silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features a three-tower package configuration designed for high-current applications. The device supports a repetitive peak reverse voltage of 40 V and an average forward current rating of 300 A. Key electrical characteristics include a maximum non-repetitive peak forward surge current capability, ensuring robustness against transient overloads. The component operates within a junction temperature range of -55 °C to +150 °C, providing reliable performance in demanding thermal environments.

Feature Summary

  • Low forward voltage design for enhanced efficiency
  • High surge current capability for transient protection
  • Electrically isolated base plate for safe mounting

Applications

  • DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power supply output rectification

Procurement Notes

Verify the specific manufacturer source when sourcing this component, as corporate entities such as Navitas Semiconductor have acquired related semiconductor assets. Confirm RoHS compliance status directly with the supplier, as historical records indicate varying compliance classifications for this part number across different distribution channels. Ensure the package orientation matches the required circuit layout before finalizing procurement orders.

Selection Notes

Select the MBRTA60040 for applications requiring high current handling with minimal conduction losses. The 40 V reverse voltage rating suits low-voltage DC systems. Consider the three-tower package dimensions for thermal management and mechanical integration. Compare the forward voltage specifications against alternative modules to ensure optimal system efficiency meets design requirements.

Part Context

This component belongs to the MBRTA series of silicon power Schottky diodes from GeneSiC Semiconductor. The series utilizes a three-tower package structure, distinguishing it from twin-tower or standard bridge rectifier formats. This packaging facilitates direct heatsink mounting and provides electrical isolation, catering to industrial power electronics where compactness and thermal performance are critical.

Replacement Considerations

The MBR60040CT is a documented substitute within the same product family. Verify that the replacement maintains compatibility with the existing thermal interface and mounting hardware. Ensure the substitute part meets the same 40 V and 300 A ratings to guarantee equivalent circuit performance.

MBRTA60040MBRTA60040

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