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Product Detailed Parameters
- Description：DIODE MOD SCHOTT 45V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：45 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：700 mV @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1 mA @ 45 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRTA60045 is a silicon Schottky rectifier module manufactured by GeneSiC Semiconductor. It features a Twin Tower package configuration with screw mount installation. The device supports a maximum repetitive reverse voltage of 45 V and a continuous forward current of 600 A. The typical forward voltage drop is specified at 750 mV under rated conditions. Operating temperatures range from -55 °C to +150 °C junction temperature.
Feature Summary
- Utilizes silicon Schottky barrier technology for low forward voltage drop and high efficiency.
- Designed in a Twin Tower package structure suitable for high-current power applications.
- Features screw mount terminal connections for secure mechanical attachment.
Applications
- High-current DC power supply systems
- Industrial motor drive freewheeling circuits
- Uninterruptible power supply (UPS) output rectification
Procurement Notes
Verify the specific manufacturer source, as GeneSiC assets are integrated into Navitas Semiconductor. Confirm RoHS compliance status and datasheet revision before ordering. Ensure thermal management solutions match the Twin Tower package requirements for reliable operation at high currents.
Selection Notes
Select this component when designing circuits requiring high surge capability and low conduction losses at low voltages. Compare forward voltage characteristics against alternative packages to ensure compatibility with existing heatsinking infrastructure. Validate that the 45 V rating provides sufficient margin for the target application's peak reverse voltage spikes.
Part Context
This part belongs to the MBR series of high-power silicon Schottky diodes. It shares the Twin Tower form factor with other variants in the family, differing primarily in current and voltage ratings. The module is intended for replacement or design-in where robust, high-amperage rectification is required in compact industrial enclosures.
Replacement Considerations
Cross-reference with MBRT40060R for similar Twin Tower mounting but verify current and voltage derating. Check MBR60030CTR for identical package style and higher current capacity if voltage ratings align. Ensure pinout compatibility before substituting.
