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Product Detailed Parameters
- Description：DIODE MOD SCHOT 100V 400A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：400A
- Voltage - Forward (Vf) (Max) @ If：840 mV @ 400 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1 mA @ 100 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MBRTA800100R is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features a three-tower package configuration with a maximum repetitive reverse voltage of 100 V and a forward current rating of 400 A. The device exhibits a typical forward voltage of approximately 1.25 V at rated conditions. Designed for high-power applications, it supports a peak non-repetitive surge current of 8000 A and operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- Utilizes silicon Schottky technology for low forward voltage drop and fast switching characteristics.
- Features an isolated three-tower package design suitable for direct mounting on heatsinks.
- Provides high surge current capability to withstand transient overload conditions.
Applications
- High-frequency DC-DC converters
- Free-wheeling rectification in motor drives
- Induction heating power supplies
Procurement Notes
Verify the specific suffix 'R' against the manufacturer's latest datasheet to confirm exact thermal resistance values and pinout orientation. Ensure that the selected variant matches the required voltage and current ratings for the target circuit design before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high current handling and efficient rectification. Consider the thermal management requirements associated with the three-tower package and ensure adequate heatsinking to maintain junction temperatures within the specified operational limits during continuous operation.
Part Context
This part belongs to the MBRTA series of silicon power Schottky diodes from GeneSiC Semiconductor. The series is characterized by robust construction and high current density, targeting industrial power electronics where reliability under harsh electrical and thermal conditions is critical.
Replacement Considerations
Consult official cross-reference lists for compatible alternatives. Verify that any substitute maintains identical voltage, current, and thermal specifications to ensure circuit compatibility without redesign.
