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The MBRTA80020 is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features a three-tower package configuration with a common cathode arrangement for dual diodes. The device supports a reverse voltage of 20 V and an average forward current of 400 A per diode. Key electrical characteristics include a maximum forward voltage of 560 mV at 400 A and a typical reverse leakage current of 1 mA at 20 V. The module operates within a junction temperature range of -55°C to +150°C and utilizes screw mount installation.
Verify the specific manufacturer designation, as product listings may reference Navitas Semiconductor due to corporate acquisitions. Confirm the package type matches the required three-tower form factor. Ensure the voltage and current ratings align with the target circuit design requirements before finalizing procurement orders.
Select this component for applications requiring high current handling with minimal conduction losses. The 20 V rating suits low-voltage output stages. Evaluate thermal resistance capabilities against the system's heat dissipation strategy. Consider the common cathode topology for simplified control logic in synchronous rectifier designs.
This part belongs to the MBRTA series of silicon power Schottky diode modules. The series offers various voltage and current combinations tailored for industrial and commercial power conversion needs. The three-tower packaging distinguishes it from standard twin-tower or single-die modules, providing enhanced current capacity.
Direct substitutes include other GeneSiC MBRTA series parts with matching current and voltage ratings, such as MBRTA80045 or MBRTA80060, provided the reverse voltage requirements are met. Cross-brand replacements require verification of pinout compatibility and thermal performance.