MBRTA80040R

Overview

The MBRTA80040R is a Silicon Power Schottky Diode manufactured by GeneSiC Semiconductor. It features a Three Tower package with chassis mount configuration. The device operates at a repetitive peak reverse voltage of 40V and supports an average forward current of 400A. It is designed as a common anode diode array, providing high surge capability suitable for power applications.

Feature Summary

• High surge capability for robust power handling
• Electrically isolated base plate in Three Tower package
• Common anode configuration for dual element operation

Applications

• Power rectification circuits
• Chassis mounted power modules
• Industrial power supplies

Procurement Notes

Verify the specific suffix 'R' indicates reversed leads if applicable to your design requirements. Confirm the component status as obsolete or limited supply through official manufacturer channels before finalizing procurement plans. Ensure thermal management solutions align with the chassis mount package specifications.

Selection Notes

Select this component for applications requiring 40V reverse voltage and 400A continuous current capacity. The Three Tower package offers electrical isolation benefits. Consider the common anode structure for bridge or synchronous rectifier topologies where shared anode connections are required.

Part Context

This part belongs to the GeneSiC Semiconductor silicon power Schottky diode family. It utilizes the Three Tower package architecture, which distinguishes it from standard twin tower or flat pack alternatives. The device is engineered for high-current industrial and commercial power conversion systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing thermal interfaces and mounting hardware when sourcing alternative components.