MBT3906DW1T1G

$0.17

Description：TRANS 2PNP 40V 200MA SC88/SC70
Series：-

SKU:5aa873c6cc84 Category: Bipolar Transistor Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS 2PNP 40V 200MA SC88/SC70
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：2 PNP (Dual)
Current - Collector (Ic) (Max)：200mA
Voltage - Collector Emitter Breakdown (Max)：40V
Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 1V
Power - Max：150mW
Frequency - Transition：250MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-88/SC70-6/SOT-363
Grade：-
Qualification：-

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MBT3906DW1T1G

Overview

The MBT3906DW1T1G is a dual general-purpose PNP bipolar junction transistor (BJT) array manufactured by onsemi. It integrates two discrete devices into a single SOT-363 surface-mount package to optimize board space. The device features a collector-emitter voltage of -40 V and a continuous collector current of -200 mA, with a maximum power dissipation of 150 mW at 25°C ambient temperature. Key electrical characteristics include a DC current gain ranging from 60 to 300, a transition frequency of 250 MHz, and a low collector-emitter saturation voltage of ≤ 0.4 V. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Integrates two PNP transistors in a compact SOT-363 package for space-constrained designs
Provides low collector-emitter saturation voltage for efficient switching performance
Offers high DC current gain suitable for general-purpose amplification applications
Compliant with RoHS standards and available in lead-free packaging

Applications

General-purpose amplifier circuits
Low-power surface mount applications requiring reduced component count
Switching applications where board space is limited

Procurement Notes

Verify the specific ordering suffix to confirm package type and shipping quantity. The standard tape and reel configuration contains 3,000 units. Ensure compatibility with the required automotive or industrial control change requirements if the S-prefix designation is necessary for your application site specifications.

Selection Notes

Select this component when a dual PNP configuration is required in a minimal footprint. Compare the 150 mW power dissipation limit against thermal constraints. Verify that the -40 V voltage rating meets circuit requirements. Consider the 250 MHz transition frequency for signal bandwidth needs.

Part Context

This device is part of the MBT3906DW1 series, derived from the popular SOT-23/SOT-323 three-leaded devices. It serves as a direct replacement for single transistors in dual configurations, simplifying circuit design by reducing the number of components and assembly steps required for general-purpose BJT arrays.