FET, MOSFET Arrays MC7252KDW-TP product image

MC7252KDW-TP

$0.51
  • Description:MOSFET N/P-CH 60V 0.34A SOT363
  • Series:-

SKU:5da5f0998be7 Category: Brand:

  
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MC7252KDW-TP is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is MOSFET N/P-CH 60V 0.34A SOT363. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MC7252KDW-TP

  • Description:MOSFET N/P-CH 60V 0.34A SOT363
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V, 50V
  • Current - Continuous Drain (Id) @ 25°C:340mA, 180mA
  • Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V, 8Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA, 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:40pF, 30pF @ 10V, 5V
  • Power - Max:150mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MC7252KDW-TP

MC7252KDW-TP

FET, MOSFET Arrays Overview

The MC7252KDW-TP is a dual N-channel and P-channel MOSFET manufactured by Micro Commercial Components (MCC) in a SOT-363 package. The N-channel device features a drain-source voltage of 60 V, continuous drain current of 0.34 A, and on-resistance of 1.7 Ω at VGS=10V. The P-channel device offers a drain-source voltage of -50 V, continuous drain current of -0.18 A, and on-resistance of 2.1 Ω at VGS=-10V. Total power dissipation is 320 mW with an operating junction temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Integrated dual configuration combining one N-channel and one P-channel MOSFET within a single compact SOT-363 surface-mount package.
  • Provides electrostatic discharge protection rated up to 2 kV under the Human Body Model standard.
  • Manufactured as a halogen-free green device with epoxy that meets UL 94 V-0 flammability ratings.
  • Compliant with RoHS directives, indicated by the 'P' suffix designation.

FET, MOSFET Arrays Applications

  • Battery-powered portable electronic devices requiring space-efficient switching solutions.
  • Low-voltage logic level signal routing and control circuits.
  • Power management modules for consumer electronics utilizing small form-factor components.

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix matches the required packaging format. Confirm that the component version aligns with the latest revision data provided by the manufacturer. Ensure procurement channels are authorized distributors to guarantee genuine parts and full traceability. Check for any product change notifications regarding material or process updates before finalizing orders.

FET, MOSFET Arrays Selection Notes

Select this component when a design requires both N-type and P-type switching capabilities within a restricted footprint. Evaluate the thermal resistance characteristics against the expected ambient temperature conditions. Consider the gate threshold voltage requirements relative to the driving logic levels. Verify that the maximum drain currents meet the load specifications without exceeding the total power dissipation limits.

FET, MOSFET Arrays Part Context

This part belongs to the MCC dual MOSFET family designed for general-purpose switching applications. It utilizes silicon technology to provide reliable performance in consumer electronics. The SOT-363 package allows for automated surface-mount assembly, supporting high-volume manufacturing processes while maintaining electrical integrity across the specified temperature range.

FET, MOSFET Arrays Replacement Considerations

MC7252KDWAS-TP

FET, MOSFET Arrays FAQ

What is the maximum allowable junction temperature for the MC7252KDW-TP?

The operating junction temperature range extends from -55°C to +150°C.

How does the device handle electrostatic discharge events?

The component includes internal protection structures capable of withstanding up to 2 kV according to the Human Body Model specification.

What is the typical gate threshold voltage for the N-channel section?

The gate-source threshold voltage typically ranges between 1 V and 2.5 V when tested at a drain current of 250 µA.

MC7252KDW-TPMC7252KDW-TP
$0.51
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