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MC7252KDW-TP is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is MOSFET N/P-CH 60V 0.34A SOT363. Review the specifications below when checking this part for your BOM.
The MC7252KDW-TP is a dual N-channel and P-channel MOSFET manufactured by Micro Commercial Components (MCC) in a SOT-363 package. The N-channel device features a drain-source voltage of 60 V, continuous drain current of 0.34 A, and on-resistance of 1.7 Ω at VGS=10V. The P-channel device offers a drain-source voltage of -50 V, continuous drain current of -0.18 A, and on-resistance of 2.1 Ω at VGS=-10V. Total power dissipation is 320 mW with an operating junction temperature range from -55°C to +150°C.
Verify the specific ordering suffix matches the required packaging format. Confirm that the component version aligns with the latest revision data provided by the manufacturer. Ensure procurement channels are authorized distributors to guarantee genuine parts and full traceability. Check for any product change notifications regarding material or process updates before finalizing orders.
Select this component when a design requires both N-type and P-type switching capabilities within a restricted footprint. Evaluate the thermal resistance characteristics against the expected ambient temperature conditions. Consider the gate threshold voltage requirements relative to the driving logic levels. Verify that the maximum drain currents meet the load specifications without exceeding the total power dissipation limits.
This part belongs to the MCC dual MOSFET family designed for general-purpose switching applications. It utilizes silicon technology to provide reliable performance in consumer electronics. The SOT-363 package allows for automated surface-mount assembly, supporting high-volume manufacturing processes while maintaining electrical integrity across the specified temperature range.
MC7252KDWAS-TP
The operating junction temperature range extends from -55°C to +150°C.
The component includes internal protection structures capable of withstanding up to 2 kV according to the Human Body Model specification.
The gate-source threshold voltage typically ranges between 1 V and 2.5 V when tested at a drain current of 250 µA.
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