MCACD50N06YHE3-TP

FET, MOSFET Arrays Overview

The MCACD50N06YHE3-TP is a dual N-channel power MOSFET from Micro Commercial Components, utilizing Split Gate Trench technology. It features a PDFN5060-8D package with a Drain-Source Voltage (VDS) of 60 V and a continuous drain current (ID) of 50 A at 25°C case temperature. The device offers a maximum on-resistance (RDS(on)) of 9 mΩ at VGS=10V and ID=20A. It includes an integrated body diode with a forward voltage of 1.2 V at 20 A. Total gate charge is 30 nC, and the component is qualified to AEC-Q101 standards for automotive reliability.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs within a single compact package.
• Split Gate Trench technology designed to achieve low on-resistance and high-density cell performance.
• Qualified to AEC-Q101 standards, ensuring suitability for demanding automotive electronic environments.
• PDFN5060-8D package provides excellent thermal dissipation capabilities and moisture sensitivity level 1.

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• Motor control applications
• High-efficiency DC-DC converters

FET, MOSFET Arrays Procurement Notes

Verify authenticity by purchasing exclusively from MCC or authorized distributors due to counterfeiting risks. Confirm the 'TP' suffix indicates RoHS compliance and lead-free finish. Ensure the specific PDFN5060-8D footprint matches the PCB design. Check the latest datasheet revision for any updates to electrical characteristics or thermal limits before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a dual MOSFET solution is required in a space-constrained automotive application. The 60 V rating and 50 A current capacity suit medium-power switching tasks. The low RDS(on) minimizes conduction losses. Verify that the thermal management strategy aligns with the specified junction-to-case resistance. Consider the dual structure benefits for synchronous rectification or half-bridge configurations.

FET, MOSFET Arrays Part Context

This part belongs to the MCUxxN06YHE3-TP family of 60 V N-channel MOSFETs from MCC. These devices are engineered for automotive use, leveraging SGT technology for improved efficiency. The family includes various packages like DPAK and DFN333, offering design flexibility. The MCACD50N06YHE3-TP specifically utilizes the PDFN5060-8D form factor for enhanced thermal performance compared to smaller packages.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other MCC dual N-channel MOSFETs in the same series, such as MCACD50N04YHE3-TP (40 V variant). Cross-brand replacements require matching the 60 V rating, dual configuration, PDFN5060-8D package, and similar RDS(on) and thermal characteristics. Verify pinout compatibility and electrical parameters against the original datasheet.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for this dual MOSFET?

The maximum continuous drain current (ID) is 50 A at a case temperature of 25°C.

Does this component meet automotive qualification standards?

Yes, the MCACD50N06YHE3-TP is qualified to the AEC-Q101 standard.

What is the reverse recovery time of the internal body diode?

The typical reverse recovery time (trr) of the body diode is 18 ns.