MCACD60N04YHE3-TP

FET, MOSFET Arrays Overview

The MCACD60N04YHE3-TP is a dual N-channel MOSFET manufactured by Micro Commercial Components (MCC). It utilizes Split Gate Trench MOSFET technology and is housed in an 8-pin PDFN5060-8D surface-mount package. The device features a drain-source voltage rating of 40V and a continuous drain current of 60A at 25°C case temperature. Key electrical characteristics include a maximum on-resistance of 5.5 mΩ at VGS=10V and ID=20A, with a total gate charge of 15.6 nC. It operates within a junction temperature range of -55°C to +175°C and holds AEC-Q101 qualification.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration providing two independent channels in a single compact package.
• Split Gate Trench MOSFET technology designed for high efficiency and low switching losses.
• Automotive-grade reliability certified under the AEC-Q101 standard.
• Halogen-free construction with epoxy meeting UL 94 V-0 flammability ratings.

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• DC-DC converter circuits
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized MCC distributors or direct procurement from Micro Commercial Components Corp. Counterfeit parts pose significant risks; unauthorized sources do not provide warranty coverage. Confirm the specific ordering suffix matches the required RoHS compliance and tape-and-reel packaging specifications before finalizing orders.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual-channel isolation within a constrained footprint. Ensure thermal management strategies account for the specified junction-to-case thermal resistance. Verify that drive voltages remain within the ±20V gate-source limits and that current demands do not exceed the 60A continuous rating at the operating case temperature.

FET, MOSFET Arrays Part Context

This part belongs to the MCACD series of dual MOSFETs from Micro Commercial Components. It is specifically engineered for automotive and industrial environments where space efficiency and robust performance are critical. The PDFN5060-8D package offers improved thermal dissipation compared to smaller form factors while maintaining a low profile suitable for modern surface-mount assembly processes.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the dual N-channel topology, 40V rating, and PDFN5060-8D package. Verify pinout compatibility and electrical parameters such as RDS(on) and Qg to ensure circuit functionality remains unchanged without redesigning the gate drive or thermal interface.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the MCACD60N04YHE3-TP?

The maximum pulsed drain current (IDM) is rated at 240A, subject to pulse width limitations defined by the maximum junction temperature.

Is the MCACD60N04YHE3-TP suitable for high-temperature automotive environments?

Yes, the device is AEC-Q101 qualified and supports an operating junction temperature range up to +175°C, making it suitable for demanding automotive applications.

What is the typical reverse recovery time for the internal body diode?

The typical reverse recovery time (trr) for the continuous body diode is 23 ns when tested at IS=20A.