MCACD6D7N04YHHE3-TP

FET, MOSFET Arrays Overview

MCACD6D7N04YHHE3 is a dual N-channel MOSFET utilizing Split Gate Trench technology. It features a 40V drain-source voltage and a maximum continuous drain current of 42A at 25°C. The device exhibits a typical on-resistance of 6.7mΩ and operates within a junction temperature range of -55°C to +175°C. Packaged in a PDFN5060-8D footprint, it supports high thermal dissipation with a junction-to-case resistance of 3.5°C/W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with split gate trench architecture
• AEC-Q101 qualified for automotive reliability standards
• PDFN5060-8D package optimized for heat dissipation
• Halogen-free green device with UL 94 V-0 epoxy rating

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• High-density DC-DC converter designs
• Motor control applications requiring low on-resistance

FET, MOSFET Arrays Procurement Notes

Verify the authenticity of MCACD6D7N04YHHE3 components by purchasing exclusively from Micro Commercial Components or their authorized distributors. Counterfeit prevention measures are strictly enforced; parts acquired through unauthorized channels lack warranty coverage and traceability. Confirm RoHS compliance and AEC-Q101 qualification status prior to integration into production lines.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel isolation in a compact surface-mount format. The 40V rating suits low-voltage automotive and industrial environments. Evaluate thermal management requirements against the 3.5°C/W junction-to-case resistance to ensure operation remains within the specified 175°C maximum junction temperature limit under load.

FET, MOSFET Arrays Part Context

This part belongs to MCC's automotive-grade MOSFET portfolio designed for robust performance in demanding environments. The series emphasizes low conduction losses and high switching efficiency through advanced trench cell technology. It targets applications where space constraints and thermal management are critical design factors.

FET, MOSFET Arrays Replacement Considerations

No public substitute part numbers are documented for this specific component.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current capability?

The device supports a pulsed drain current of 240A.

Does the component meet automotive quality standards?

Yes, the MCACD6D7N04YHHE3 is AEC-Q101 qualified.

What is the reverse recovery time of the internal body diode?

The reverse recovery time is typically 19.5ns.