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MCB20P1200LB-TRR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET 2N-CH 1200V 9SMPD. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MCB20P1200LB-TRR
- Description：MOSFET 2N-CH 1200V 9SMPD
- Series：MCB20P1200LB
- Mfr：IXYS
- Package：Tape & Reel (TR)
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：9-PowerSMD
- Supplier Device Package：9-SMPD-B
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MCB20P1200LB-TRR
FET, MOSFET Arrays Overview
The MCB20P1200LB-TRR is a silicon carbide (SiC) power MOSFET manufactured by IXYS. It features an SMPD package and supports surface mount installation. The device has a maximum collector-emitter voltage of 1200V and operates within a temperature range of -40°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Utilizes silicon carbide technology for high-efficiency power switching
- Designed for surface mount applications in compact configurations
FET, MOSFET Arrays Applications
- High-frequency power conversion systems
- Industrial motor drive inverters
- Uninterruptible power supply units
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix TRR against official IXYS documentation to confirm reel packaging specifications. Ensure compatibility with standard surface mount assembly processes. Cross-reference the part number with current datasheets to validate technical parameters before procurement.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring high thermal stability and low switching losses. The SMPD package facilitates efficient heat dissipation in dense circuit layouts. Evaluate the 1200V rating against system voltage requirements to ensure adequate safety margins during operation.
FET, MOSFET Arrays Part Context
This part belongs to the IXYS SiC MOSFET portfolio, designed for advanced power electronics. It complements other high-voltage discrete devices from the manufacturer, offering enhanced performance over traditional silicon alternatives in demanding electrical environments.
FET, MOSFET Arrays Replacement Considerations
Consult official substitution lists for direct equivalents. Verify pinout and thermal characteristics when considering alternative SiC MOSFETs from different manufacturers.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
