MCB30P1200LB-TRR

Description：MOSFET 2N-CH 1200V 9SMPD
Series：MCB30P1200LB

SKU:887b19956eac Category: FET, MOSFET Arrays Brand: IXYS

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Product introduction

MCB30P1200LB-TRR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET 2N-CH 1200V 9SMPD. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MCB30P1200LB-TRR

Description：MOSFET 2N-CH 1200V 9SMPD
Series：MCB30P1200LB
Mfr：IXYS
Package：Tape & Reel (TR)
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：9-PowerSMD
Supplier Device Package：9-SMPD-B
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MCB30P1200LB-TRR

MCB30P1200LB-TRR

FET, MOSFET Arrays Overview

The MCB30P1200LB-TRR is a Silicon Carbide (SiC) MOSFET phaseleg module manufactured by IXYS. It utilizes the SMPD-B package and features a low on-resistance of 40 milliohms. The component supports a drain-source breakdown voltage of 1200 volts and handles continuous current within its specified thermal limits. Designed for surface mount applications, it operates across a temperature range from -55°C to +175°C with a power dissipation capacity of 150 watts.

FET, MOSFET Arrays Feature Summary

Utilizes Silicon Carbide semiconductor technology for high-performance switching.

FET, MOSFET Arrays Applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TRR against official datasheets to confirm reel packaging requirements. Ensure the SMPD-B footprint matches the target PCB design. Cross-reference the 40 milliohm resistance value with the latest manufacturer documentation to avoid discrepancies from legacy revisions.

FET, MOSFET Arrays Selection Notes

Select this component when high-frequency operation and elevated thermal stability are required. The SiC material offers superior efficiency compared to silicon alternatives. Confirm that the system voltage does not exceed the 1200-volt rating under transient conditions.

FET, MOSFET Arrays Part Context

This part belongs to the IXYS lineup of discrete and module-level power semiconductors. It represents a specialized solution for compact power conversion systems requiring robust thermal management and minimal conduction losses in high-voltage environments.